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P.J. Zampardi
P.J. Zampardi
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Title
Cited by
Cited by
Year
Current status and future trends of SiGe BiCMOS technology
DL Harame, DC Ahlgren, DD Coolbaugh, JS Dunn, GG Freeman, ...
IEEE Transactions on Electron Devices 48 (11), 2575-2594, 2001
2292001
Power amplifier modules including related systems, devices, and methods
HE Chen, Y Guo, DV Hoang, M Janani, TM Ko, PJ Lehtola, AJ LoBianco, ...
US Patent 9,041,472, 2015
139*2015
Design of high-efficiency current-mode class-D amplifiers for wireless handsets
TP Hung, AG Metzger, PJ Zampardi, M Iwamoto, PM Asbeck
IEEE transactions on microwave theory and techniques 53 (1), 144-151, 2005
1032005
Fast novel thermal analysis simulation tool for integrated circuits (FANTASTIC)
L Codecasa, V d'Alessandro, A Magnani, N Rinaldi, PJ Zampardi
20th International Workshop on Thermal Investigations of ICs and Systems, 1-6, 2014
972014
A comparison of linear handset power amplifiers in different bipolar technologies
K Nellis, PJ Zampardi
IEEE Journal of Solid-State Circuits 39 (10), 1746-1754, 2004
772004
Linearity improvement of HBT-based Doherty power amplifiers based on a simple analytical model
Y Zhao, AG Metzger, PJ Zampardi, M Iwamoto, PM Asbeck
IEEE transactions on microwave theory and techniques 54 (12), 4479-4488, 2006
632006
BiFET INCLUDING A FET HAVING INCREASED LINEARITY AND MANUFACTURABILITY
PJ Zampardi, RN Pierson
US Patent 6,906,359, 2005
512005
A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies
S Zhang, G Niu, JD Cressler, SJ Mathew, U Gogineni, SD Clark, ...
IEEE Transactions on Nuclear Science 47 (6), 2521-2527, 2000
482000
GaInP/GaAs HBT's for high-speed integrated circuit applications
WJ Ho, MF Chang, A Sailer, P Zampardi, D Deakin, B McDermott, ...
IEEE Transactions on Electron Devices 40 (11), 2113-2114, 1993
481993
A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment …
F Rotella, BK Bhattacharya, V Blaschke, M Matloubian, A Brotman, ...
IEEE transactions on electron devices 52 (7), 1429-1441, 2005
442005
Process-compensated HBT power amplifier bias circuits and methods
DS Ripley, PJ Lehtola, PJ Zampardi, H Shao, TM Ko, MT Ozalas
US Patent 9,419,567, 2016
402016
Characterization of heterojunction bipolar transistor structures using cross-sectional scanning force microscopy
PA Rosenthal, ET Yu, RL Pierson, PJ Zampardi
Journal of Applied Physics 87 (4), 1937-1942, 2000
402000
Apparatus and methods for reducing impact of high RF loss plating
W Sun, PJ Zampardi, H Shao
US Patent 8,896,091, 2014
392014
Power amplifier modules including bipolar transistor with grading and related systems, devices, and methods
TM Ko, PJ Lehtola, MT Ozalas, DS Ripley, H Shao, PJ Zampardi
US Patent 9,520,835, 2016
382016
Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications
PF Chen, UMT Hsin, RJ Welty, PM Asbeck, RL Pierson, PJ Zampardi, ...
IEEE transactions on microwave theory and techniques 47 (8), 1433-1438, 1999
381999
Role of neutral base recombination in high gain AlGaAs/GaAs HBT's
RE Welser, N Pan, DP Vu, PJ Zampardi, BT McDermott
IEEE Transactions on Electron Devices 46 (8), 1599-1607, 1999
381999
Methods and apparatus for a composite collector double heterojunction bipolar transistor
CE Chang, RL Pierson, PJ Zampardi, PM Asbeck
US Patent 6,563,145, 2003
362003
Power amplifier modules including wire bond pad and related systems, devices, and methods
HB Modi, SL Petty-Weeks, H Shao, W Sun, PJ Zampardi, G Zhang
US Patent 9,660,584, 2017
352017
40 Gbit/s AlGaAs/GaAs HBT 4: 1 multiplexer IC
K Runge, RL Pierson, PJ Zampardi, PB Thomas, J Yu, KC Wang
Electronics Letters 31 (11), 876-877, 1995
351995
Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments
V d'Alessandro, AP Catalano, L Codecasa, PJ Zampardi, B Moser
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2019
342019
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