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Memristor with Ag‐Cluster‐Doped TiO2 Films as Artificial Synapse for Neuroinspired Computing
X Yan, J Zhao, S Liu, Z Zhou, Q Liu, J Chen, XY Liu
Advanced Functional Materials 28 (1), 1705320, 2018
Mandates: National Natural Science Foundation of China
Vacancy‐Induced Synaptic Behavior in 2D WS2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing
X Yan, Q Zhao, AP Chen, J Zhao, Z Zhou, J Wang, H Wang, L Zhang, X Li, ...
Small 15 (24), 1901423, 2019
Mandates: National Natural Science Foundation of China
The future of memristors: Materials engineering and neural networks
K Sun, J Chen, X Yan
Advanced Functional Materials 31 (8), 2006773, 2021
Mandates: National Natural Science Foundation of China
Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors
X Yan, Y Pei, H Chen, J Zhao, Z Zhou, H Wang, L Zhang, J Wang, X Li, ...
Advanced materials 31 (7), 1805284, 2019
Mandates: National Natural Science Foundation of China
Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning
X Yan, L Zhang, H Chen, X Li, J Wang, Q Liu, C Lu, J Chen, H Wu, P Zhou
Advanced Functional Materials 28 (40), 1803728, 2018
Mandates: National Natural Science Foundation of China
Artificial synapses based on multiterminal memtransistors for neuromorphic application
L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ...
Advanced Functional Materials 29 (25), 1901106, 2019
Mandates: A*Star, Singapore, National Research Foundation, Singapore
Current-induced magnetization switching in all-oxide heterostructures
L Liu, Q Qin, W Lin, C Li, Q Xie, S He, X Shu, C Zhou, Z Lim, J Yu, W Lu, ...
Nature nanotechnology 14 (10), 939-944, 2019
Mandates: A*Star, Singapore, National Research Foundation, Singapore
Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing
HY Yoong, H Wu, J Zhao, H Wang, R Guo, J Xiao, B Zhang, P Yang, ...
Advanced Functional Materials 28 (50), 1806037, 2018
Mandates: National Natural Science Foundation of China, National Research Foundation …
Emergence of Topological Hall Effect in a SrRuO3 Single Layer
Q Qin, L Liu, W Lin, X Shu, Q Xie, Z Lim, C Li, S He, GM Chow, J Chen
Advanced Materials 31 (8), 1807008, 2019
Mandates: National Research Foundation, Singapore
Current status and prospects of memristors based on novel 2D materials
Q Zhao, Z Xie, YP Peng, K Wang, H Wang, X Li, H Wang, J Chen, ...
Materials Horizons 7 (6), 1495-1518, 2020
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Ferroic tunnel junctions and their application in neuromorphic networks
R Guo, W Lin, X Yan, T Venkatesan, J Chen
Applied physics reviews 7 (1), 2020
Mandates: National Natural Science Foundation of China, A*Star, Singapore, National …
Artificial visual perception nervous system based on low-dimensional material photoelectric memristors
Y Pei, L Yan, Z Wu, J Lu, J Zhao, J Chen, Q Liu, X Yan
ACS nano 15 (11), 17319-17326, 2021
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Flexible memristors as electronic synapses for neuro-inspired computation based on scotch tape-exfoliated mica substrates
X Yan, Z Zhou, J Zhao, Q Liu, H Wang, G Yuan, J Chen
Nano Research 11, 1183-1192, 2018
Mandates: National Natural Science Foundation of China
Flexible transparent organic artificial synapse based on the tungsten/egg albumen/indium tin oxide/polyethylene terephthalate memristor
X Yan, X Li, Z Zhou, J Zhao, H Wang, J Wang, L Zhang, D Ren, X Zhang, ...
ACS applied materials & interfaces 11 (20), 18654-18661, 2019
Mandates: National Natural Science Foundation of China
MXene Ti3C2 memristor for neuromorphic behavior and decimal arithmetic operation applications
K Wang, J Chen, X Yan
Nano Energy 79, 105453, 2021
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
A Pure 2H‐MoS2 Nanosheet‐Based Memristor with Low Power Consumption and Linear Multilevel Storage for Artificial Synapse Emulator
K Wang, L Li, R Zhao, J Zhao, Z Zhou, J Wang, H Wang, B Tang, C Lu, ...
Advanced Electronic Materials 6 (3), 1901342, 2020
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
An Electronic Synapse Based on 2D Ferroelectric CuInP2S6
B Li, S Li, H Wang, L Chen, L Liu, X Feng, Y Li, J Chen, X Gong, KW Ang
Advanced Electronic Materials 6 (12), 2000760, 2020
Mandates: A*Star, Singapore, National Research Foundation, Singapore
Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer
Q Xie, W Lin, B Yang, X Shu, S Chen, L Liu, X Yu, MBH Breese, T Zhou, ...
Advanced Materials 31 (21), 1900776, 2019
Mandates: National Natural Science Foundation of China, National Research Foundation …
Highly improved performance in Zr 0.5 Hf 0.5 O 2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory
X Yan, L Zhang, Y Yang, Z Zhou, J Zhao, Y Zhang, Q Liu, J Chen
Journal of Materials Chemistry C 5 (42), 11046-11052, 2017
Mandates: National Natural Science Foundation of China
Designing carbon conductive filament memristor devices for memory and electronic synapse applications
Z Zhou, J Zhao, AP Chen, Y Pei, Z Xiao, G Wang, J Chen, G Fu, X Yan
Materials Horizons 7 (4), 1106-1114, 2020
Mandates: National Natural Science Foundation of China
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