Articles with public access mandates - Cedric KlinkertLearn more
Not available anywhere: 4
First-principles simulations of 2-D semiconductor devices: Mobility, IV characteristics, and contact resistance
M Luisier, A Szabo, C Stieger, C Klinkert, S Brück, A Jain, L Novotny
2016 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2016
Mandates: Swiss National Science Foundation
Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels
A Szabo, C Klinkert, D Campi, C Stieger, N Marzari, M Luisier
IEEE Transactions on Electron Devices 65 (10), 4180-4187, 2018
Mandates: Swiss National Science Foundation
Light-matter interactions in van der Waals photodiodes from first principles
J Cao, S Fiore, C Klinkert, N Vetsch, M Luisier
Physical Review B 106 (3), 035306, 2022
Mandates: Swiss National Science Foundation, European Commission
Novel 2-D Materials for Tunneling FETs: an Ab-initio Study
C Klinkert, A Szabo, D Campi, C Stieger, N Marzari, M Luisier
2018 76th Device Research Conference (DRC), 1-2, 2018
Mandates: Swiss National Science Foundation
Available somewhere: 3
2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope
C Klinkert, Á Szabó, C Stieger, D Campi, N Marzari, M Luisier
ACS nano 14 (7), 8605-8615, 2020
Mandates: Swiss National Science Foundation, Government of Italy
Impact of orientation misalignments on black phosphorus ultrascaled field-effect transistors
C Klinkert, S Fiore, J Backman, Y Lee, M Luisier
IEEE Electron Device Letters 42 (3), 434-437, 2021
Mandates: Swiss National Science Foundation
Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors
S Fiore, C Klinkert, F Ducry, J Backman, M Luisier
Materials 15 (3), 1062, 2022
Mandates: Swiss National Science Foundation
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