Articles with public access mandates - Ramon CollazoLearn more
Not available anywhere: 12
Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy
T Kinoshita, T Nagashima, T Obata, S Takashima, R Yamamoto, ...
Applied Physics Express 8 (6), 061003, 2015
Mandates: US Department of Energy
Ge doped GaN with controllable high carrier concentration for plasmonic applications
R Kirste, MP Hoffmann, E Sachet, M Bobea, Z Bryan, I Bryan, C Nenstiel, ...
Applied Physics Letters 103 (24), 2013
Mandates: German Research Foundation
On Ni/Au alloyed contacts to Mg-doped GaN
B Sarkar, P Reddy, A Klump, F Kaess, R Rounds, R Kirste, S Mita, E Kohn, ...
Journal of Electronic Materials 47, 305-311, 2018
Mandates: US National Science Foundation, US Department of Defense
Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior
PJ Snyder, R Kirste, R Collazo, A Ivanisevic
Rsc Advances 6 (100), 97873-97881, 2016
Mandates: US National Science Foundation
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
R Sengupta, S Vaidya, D Szymanski, D Khachariya, M Bockowski, ...
ACS Applied Nano Materials 6 (7), 5081-5086, 2023
Mandates: US National Science Foundation
Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations
S Gleco, P Reddy, R Kirste, R Collazo, D LaJeunesse, A Ivanisevic
ACS Applied Bio Materials 3 (10), 7211-7218, 2020
Mandates: US Department of Defense
Oxidative Stress Transcriptional Responses of Escherichia coli at GaN Interfaces
S Gleco, T Noussi, A Jude, P Reddy, R Kirste, R Collazo, D LaJeunesse, ...
ACS Applied Bio Materials 3 (12), 9073-9081, 2020
Mandates: US Department of Defense
Au: Ga alloyed clusters to enhance Al contacts to P-type GaN
A Klump, F Kaess, B Sarkar, R Kirste, R Collazo, P Reddy, S Mita, Z Sitar, ...
2018 IEEE Research and Applications of Photonics In Defense Conference …, 2018
Mandates: US National Science Foundation, US Department of Defense
Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation
K Huynh, Y Wang, ME Liao, J Tweedie, P Reddy, MH Breckenridge, ...
Journal of Applied Physics 135 (2), 2024
Mandates: National Science Centre, Poland
AlGaN Based Emitters and Detectors for Non-Line-of-Sight Communication
R Kirste, P Reddy, R Collazo, Z Sitar
2023 IEEE Research and Applications of Photonics in Defense Conference …, 2023
Mandates: US Department of Defense, US National Aeronautics and Space Administration
Growth and characterization of GaN/AlGaN heterostructures on GaN substrate templates
L Hubbard, N Dietz, M Vernon, R Collazo, S Mita, R Kirste, Z Sitar, ...
Sixteenth International Conference on Solid State Lighting and LED-based …, 2017
Mandates: US Department of Energy
Advantages and limitations of UV optoelectronics on AlN substrates
R Collazo, I Bryan, Z Bryan, M Bobea, L Hussey, D Alden, S Mita, ...
2015 IEEE Summer Topicals Meeting Series (SUM), 135-136, 2015
Mandates: US Department of Energy
Available somewhere: 129
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
Mandates: US National Science Foundation, US Department of Energy, US Department of …
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
Mandates: US National Science Foundation, US Department of Energy, German Research …
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
I Bryan, Z Bryan, S Mita, A Rice, J Tweedie, R Collazo, Z Sitar
Journal of Crystal Growth 438, 81-89, 2016
Mandates: US National Science Foundation
The role of surface kinetics on composition and quality of AlGaN
I Bryan, Z Bryan, S Mita, A Rice, L Hussey, C Shelton, J Tweedie, ...
Journal of Crystal Growth 451, 65-71, 2016
Mandates: US National Science Foundation
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ...
Applied Physics Letters 112 (6), 2018
Mandates: US National Science Foundation, US Department of Defense
On compensation in Si-doped AlN
JS Harris, JN Baker, BE Gaddy, I Bryan, Z Bryan, KJ Mirrielees, P Reddy, ...
Applied Physics Letters 112 (15), 2018
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Polarity control in group-III nitrides beyond pragmatism
S Mohn, N Stolyarchuk, T Markurt, R Kirste, MP Hoffmann, R Collazo, ...
Physical Review Applied 5 (5), 054004, 2016
Mandates: US National Science Foundation, German Research Foundation
KOH based selective wet chemical etching of AlN, AlxGa1− xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ...
Applied Physics Letters 106 (8), 2015
Mandates: US Department of Energy
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