| Reliable operation of a nanogenerator under ultraviolet light via engineering piezoelectric potential TT Pham, KY Lee, JH Lee, KH Kim, KS Shin, MK Gupta, B Kumar, SW Kim Energy & Environmental Science 6 (3), 841-846, 2013 | 74 | 2013 |
| Deep-depletion mode boron-doped monocrystalline diamond metal oxide semiconductor field effect transistor TT Pham, J Pernot, G Perez, D Eon, E Gheeraert, N Rouger IEEE Electron Device Letters 38 (11), 1571-1574, 2017 | 66 | 2017 |
| Deep depletion concept for diamond MOSFET TT Pham, N Rouger, C Masante, G Chicot, F Udrea, D Eon, E Gheeraert, ... Applied Physics Letters 111 (17), 2017 | 60 | 2017 |
| Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance TT Pham, A Maréchal, P Muret, D Eon, E Gheeraert, N Rouger, J Pernot Journal of Applied Physics 123 (16), 2018 | 46 | 2018 |
| 200V, 4MV/cm lateral diamond MOSFET TT Pham, J Pernot, C Masante, D Eon, E Gheeraert, G Chicot, F Udrea, ... 2017 IEEE International Electron Devices Meeting (IEDM), 25.4. 1-25.4. 4, 2017 | 28 | 2017 |
| High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication TT Pham, M Gutiérrez, C Masante, N Rouger, D Eon, E Gheeraert, ... Applied Physics Letters 112 (10), 2018 | 26 | 2018 |
| Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS J Cañas, JC Piñero, F Lloret, M Gutierrez, T Pham, J Pernot, D Araujo Applied Surface Science 461, 93-97, 2018 | 23 | 2018 |
| Impact of nonhomoepitaxial defects in depleted diamond MOS capacitors TT Pham, JC Piñero, A Marechal, M Gutiérrez, F Lloret, D Eon, ... IEEE Transactions on Electron Devices 65 (5), 1830-1837, 2018 | 8 | 2018 |
| Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs M Gutiérrez, F Lloret, TT Pham, J Cañas, DF Reyes, D Eon, J Pernot, ... Nanomaterials 8 (8), 584, 2018 | 7 | 2018 |
| Body diode of 1.2 kV SiC MOSFET: unipolar and bipolar operation TT Pham, J Franchi, M Domeij Materials Science Forum 1091, 37-41, 2023 | 4 | 2023 |
| Pulsed forward bias body diode stress of 1700 V SiC MOSFETs with individual mapping of basal plane dislocations S Kochoska, M Domeij, S Sunkari, J Justice, H Das, TT Pham, J Franchi, ... Materials Science Forum 1062, 554-559, 2022 | 4 | 2022 |
| 1.2 kV SiC MOSFET Body Diode Turn-Off in Fast Switching: Channel Conduction, Carrier Plasma and Parasitic Turn-On TT Pham, J Franchi, K Lee, M Domeij 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 3 | 2023 |
| Mastering the O-diamond/Al2O3 interface for unipolar boron doped diamond field effect transistor TT Pham Université Grenoble Alpes, 2017 | 3 | 2017 |
| Pulsed Forward Bias Body Diode Stress of 1200 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations S Kochoska, M Domeij, TT Pham, S Maslougkas, S Sunkari, J Justice, ... Materials Science Forum 1091, 43-47, 2023 | 2 | 2023 |
| Diamond MIS transistor J Pernot, NC Rouger, D Eon, E Gheeraert, G Chicot, TT Pham, F Udrea | 2 | 2023 |
| Diamond devices for power electronics N Rouger, TT Pham, G Perez, M Cédric, P Lefranc, PO Jeannin 11th conference on new diamond and nano carbons (Internet). Cairns …, 2017 | 2 | 2017 |
| 1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On TT Pham, J Franchi, SH Kang, KS Park, DJ Choi, M Domeij Solid State Phenomena 360, 45-49, 2024 | 1 | 2024 |
| On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs J Roig, S Kochoska, B Vlachakis, J Franchi, TT Pham Solid State Phenomena 360, 95-101, 2024 | | 2024 |
| Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter S Kochoska, J Franchi, S Maslougkas, M Domeij, TT Pham, S Sunkari, ... Defect and Diffusion Forum 434, 7-13, 2024 | | 2024 |
| Experimental Investigations on Parasitic Turn-on of 1.2 kV SiC MOSFET Discrete Devices TT Pham, K Lee, J Franchi, S Kuzmanoska, M Domeij PCIM Europe 2024; International Exhibition and Conference for Power …, 2024 | | 2024 |