Articles with public access mandates - Fiacre RougieuxLearn more
Not available anywhere: 10
Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review
FE Rougieux, C Sun, D Macdonald
Solar Energy Materials and Solar Cells 187, 263-272, 2018
Mandates: Australian Research Council
Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts
V Raj, F Rougieux, L Fu, HH Tan, C Jagadish
IEEE Journal of Photovoltaics 10 (6), 1657-1666, 2020
Mandates: Australian Research Council
Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon
FE Rougieux, HT Nguyen, DH Macdonald, B Mitchell, R Falster
IEEE Journal of Photovoltaics 7 (3), 735-740, 2017
Mandates: Australian Research Council
Precipitation of Cu and Ni in n-and p-type Czochralski-grown silicon characterized by photoluminescence imaging
C Sun, HT Nguyen, FE Rougieux, D Macdonald
Journal of Crystal Growth 460, 98-104, 2017
Mandates: Australian Research Council
Photoconductance Determination of Carrier Capture Cross Sections of Slow Traps in Silicon Through Variable Pulse Filling
M Siriwardhana, Y Zhu, Z Hameiri, D Macdonald, F Rougieux
IEEE Journal of Photovoltaics 11 (2), 273-281, 2021
Mandates: Australian Research Council
On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon
S Jafari, Y Zhu, F Rougieux, JAT De Guzman, VP Markevich, AR Peaker, ...
ACS Applied Materials & Interfaces 13 (5), 6140-6146, 2021
Mandates: UK Engineering and Physical Sciences Research Council
Activation Kinetics of the Boron–oxygen Defect in Compensated n-and p-type Silicon Studied by High-Injection Micro-Photoluminescence
C Sun, HT Nguyen, HC Sio, FE Rougieux, D Macdonald
IEEE Journal of Photovoltaics 7 (4), 988-995, 2017
Mandates: Australian Research Council
Characterisation of striations in n-type silicon wafer processed with polysilicon contacts
Z Zhou, F Rougieux, M Siriwardhana, G Coletti
Solar Energy Materials and Solar Cells 248, 111965, 2022
Mandates: Australian Research Council
Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy …
FE Rougieux, C Sun, M Juhl
Solar Energy Materials and Solar Cells 210, 110481, 2020
Mandates: Australian Research Council
The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?
F Rougieux, C Sun, M Juhl
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2522-2524, 2020
Mandates: Australian Research Council
Available somewhere: 47
Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence
HT Nguyen, FE Rougieux, B Mitchell, D Macdonald
Journal of Applied Physics 115 (4), 2014
Mandates: Australian Research Council
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald
physica status solidi (RRL)-Rapid Research Letters 10 (6), 443-447, 2016
Mandates: Australian Research Council, UK Engineering and Physical Sciences Research …
A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon
C Sun, FE Rougieux, D Macdonald
Journal of Applied Physics 117 (4), 2015
Mandates: Australian Research Council
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ...
physica status solidi (a) 213 (11), 2844-2849, 2016
Mandates: Australian Research Council, UK Engineering and Physical Sciences Research …
Hydrogen-induced degradation: Explaining the mechanism behind light-and elevated temperature-induced degradation in n-and p-type silicon
D Chen, P Hamer, M Kim, C Chan, AC nee Wenham, F Rougieux, ...
Solar Energy Materials and Solar Cells 207, 110353, 2020
Mandates: Australian Research Council
Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers
NE Grant, FE Rougieux, D Macdonald, J Bullock, Y Wan
Journal of Applied Physics 117 (5), 2015
Mandates: Australian Research Council
Reassessment of the recombination parameters of chromium in n-and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon
C Sun, FE Rougieux, D Macdonald
Journal of applied physics 115 (21), 2014
Mandates: Australian Research Council
Micrometer-scale deep-level spectral photoluminescence from dislocations in multicrystalline silicon
HT Nguyen, FE Rougieux, F Wang, H Tan, D Macdonald
IEEE Journal of Photovoltaics 5 (3), 799-804, 2015
Mandates: Australian Research Council
Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon
FE Rougieux, NE Grant, C Barugkin, D Macdonald, JD Murphy
IEEE Journal of Photovoltaics 5 (2), 495-498, 2014
Mandates: Australian Research Council, UK Engineering and Physical Sciences Research …
Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
V Raj, TS dos Santos, F Rougieux, K Vora, M Lysevych, L Fu, S Mokkapati, ...
Journal of Physics D: Applied Physics 51 (39), 395301, 2018
Mandates: Australian Research Council
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