| Electronic synapses made of layered two-dimensional materials Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ... Nature Electronics 1 (8), 458-465, 2018 | 573 | 2018 |
| Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen, F Hui, ... Nature Electronics 3 (10), 638-645, 2020 | 312 | 2020 |
| Advanced Data Encryption using 2D Materials C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ... Advanced Materials 33 (27), 2100185, 2021 | 91 | 2021 |
| Graphene–boron nitride–graphene cross-point memristors with three stable resistive states K Zhu, X Liang, B Yuan, MA Villena, C Wen, T Wang, S Chen, F Hui, Y Shi, ... ACS applied materials & interfaces 11 (41), 37999-38005, 2019 | 72 | 2019 |
| 150 nm× 200 nm cross‐point hexagonal boron nitride‐based memristors B Yuan, X Liang, L Zhong, Y Shi, F Palumbo, S Chen, F Hui, X Jing, ... Advanced Electronic Materials 6 (12), 1900115, 2020 | 37 | 2020 |
| Advanced data encryption using two-dimensional materials M Lanza, C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, ... Adv. Mater 33 (2100185.10), 1002, 2021 | 25 | 2021 |
| Micro organic light emitting diode arrays by patterned growth on structured polypyrrole J Li, Y Hu, X Liang, J Chen, L Zhong, L Liao, L Jiang, H Fuchs, W Wang, ... Advanced Optical Materials 8 (10), 1902105, 2020 | 25 | 2020 |
| Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials MA Villena, F Hui, X Liang, Y Shi, B Yuan, X Jing, K Zhu, S Chen, ... Microelectronics Reliability 102, 113410, 2019 | 25 | 2019 |
| Bimodal dielectric breakdown in electronic devices using chemical vapor deposited hexagonal boron nitride as dielectric F Palumbo, X Liang, B Yuan, Y Shi, F Hui, MA Villena, M Lanza Advanced Electronic Materials 4 (3), 1700506, 2018 | 17 | 2018 |
| Graphene coated nanoprobes: A review F Hui, S Chen, X Liang, B Yuan, X Jing, Y Shi, M Lanza Crystals 7 (9), 269, 2017 | 17 | 2017 |
| Tristate resistive switching in heterogenous van der Waals dielectric structures K Zhu, X Liang, B Yuan, MA Villena, C Wen, T Wang, S Chen, M Lanza, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 3 | 2019 |
| 150 nm× 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state X Liang, B Yuan, Y Shi, F Palumbo, S Chen, F Hui, X Jing, MA Villena, ... 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 258-260, 2019 | 3 | 2019 |
| Realization of smooth side profile using diffusion-controlled wet chemical etching for HgTe/(Hg, Cd) Te heterostructures P Shekhar, K Bendias, L Fürst, X Liang, MK Gbordzoe, T Borzenko, ... Nanotechnology 34 (20), 205302, 2023 | 2 | 2023 |
| Data Encryption: Advanced Data Encryption using 2D Materials (Adv. Mater. 27/2021) C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ... Advanced Materials 33 (27), 2170205, 2021 | 1 | 2021 |
| Uniformity of multilayer hexagonal boron nitride dielectric stacks grown by chemical vapor deposition on platinum and copper substrates F Hui, X Liang, W Fang, WS Leong, H Wang, HY Yang, Y Shi, MA Villena, ... 2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018 | 1 | 2018 |
| Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity X Liang, B Yuan, Y Shi, F Hui, X Jing, M Lanza, F Palumbo 2018 IEEE International Reliability Physics Symposium (IRPS), P-GD. 6-1-P-GD …, 2018 | 1 | 2018 |
| Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy Y Shen, K Zhu, Y Xiao, D Waldhör, AH Basher, T Knobloch, S Pazos, ... Nature Electronics, 1-12, 2024 | | 2024 |
| Period-doubling in the phase dynamics of a shunted HgTe quantum well Josephson junction W Liu, SU Piatrusha, X Liang, S Upadhyay, L Fürst, C Gould, J Kleinlein, ... arXiv preprint arXiv:2408.06119, 2024 | | 2024 |
| Graphite/h-BN van der Waals heterostructure as a gate stack for HgTe quantum wells X Liang, S Shamim, D Chen, L Fürst, T Taniguchi, K Watanabe, ... Nanotechnology, 2024 | | 2024 |
| Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks. Nature Electronics 3, 10 (2020), 638–645 S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen | | 2020 |
