| MoS2 Field-Effect Transistor with Sub-10 nm Channel Length A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG, W Chen, S Fang, ... Nano letters 16 (12), 7798-7806, 2016 | 473 | 2016 |
| Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs RN Sajjad, W Chern, JL Hoyt, DA Antoniadis IEEE Transactions on Electron Devices 63 (11), 4380-4387, 2016 | 127 | 2016 |
| High efficiency switching using graphene based electron “optics” RN Sajjad, AW Ghosh Applied Physics Letters 99 (12), 2011 | 65 | 2011 |
| Manifestation of chiral tunneling at a tilted graphene - junction RN Sajjad, S Sutar, JU Lee, AW Ghosh Physical Review B 86 (15), 155412, 2012 | 56 | 2012 |
| Prospect of achieving net-zero energy building with semi-transparent photovoltaics: A device to system level perspective KH Refat, RN Sajjad Applied Energy 279, 115790, 2020 | 50 | 2020 |
| Manipulating chiral transmission by gate geometry: switching in graphene with transmission gaps RN Sajjad, AW Ghosh ACS nano 7 (11), 9808-9813, 2013 | 45 | 2013 |
| Electronic properties of a strained silicon nanowire RN Sajjad, K Alam Journal of Applied Physics 105 (4), 044307, 2009 | 43 | 2009 |
| Chiral tunneling of topological states: Towards the efficient generation of spin current using spin-momentum locking KMM Habib, RN Sajjad, AW Ghosh Physical review letters 114 (17), 176801, 2015 | 40 | 2015 |
| Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors C Schulte-Braucks, R Pandey, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ... IEEE Transactions on Electron Devices 64 (10), 4354-4362, 2017 | 39 | 2017 |
| Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ... 2016 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2016 | 32 | 2016 |
| Electronic properties and orientation-dependent performance of InAs nanowire transistors K Alam, RN Sajjad IEEE transactions on electron devices 57 (11), 2880-2885, 2010 | 31 | 2010 |
| Atomistic deconstruction of current flow in graphene based hetero-junctions RN Sajjad, CA Polanco, AW Ghosh Journal of Computational Electronics 12, 232-247, 2013 | 23 | 2013 |
| Parametrization of a silicon nanowire effective mass model from sp3d5s* orbital basis calculations RN Sajjad, K Alam, QDM Khosru Semiconductor science and technology 24 (4), 045023, 2009 | 21 | 2009 |
| Atomic-scale characterization of graphene p–n junctions for electron-optical applications X Zhou, A Kerelsky, MM Elahi, D Wang, KMM Habib, RN Sajjad, ... ACS nano 13 (2), 2558-2566, 2019 | 18 | 2019 |
| Modified Dirac Hamiltonian for efficient quantum mechanical simulations of micron sized devices KMM Habib, RN Sajjad, AW Ghosh Applied Physics Letters 108 (11), 113105, 2016 | 17 | 2016 |
| Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene RN Sajjad, F Tseng, KMM Habib, AW Ghosh Physical Review B 92 (20), 205408, 2015 | 16 | 2015 |
| Prediction of Yield, Soiling Loss, and Cleaning Cycle: A Case Study in South Asian Highly Construction-Active Urban Zone JB Jahangir, M Al-Mahmud, MSS Shakir, MMH Mithhu, TA Rima, ... 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 1371-1374, 2020 | 11 | 2020 |
| A compact model for tunnel FET for all operation regimes including trap assisted tunneling RN Sajjad, D Antoniadis 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 11 | 2016 |
| Performance benchmarking of p-type In R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe IEDM Tech. Dig, 19.6, 2016 | 10 | 2016 |
| Serially connected monolayer MoS2 FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography A Nourbakhsh, A Zubair, A Tavakkoli, R Sajjad, X Ling, M Dresselhaus, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 10 | 2016 |
avik W ghoshProfessor, University of Virginia, Electrical EngineeringVerified email at virginia.edu