| Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation MR Sk, S Thunder, D Lehninger, S Sanctis, Y Raffel, M Lederer, ... ACS Applied Electronic Materials 5 (2), 812-820, 2023 | 13 | 2023 |
| 1F-1T array: Current limiting transistor cascoded fefet memory array for variation tolerant vector-matrix multiplication operation MR Sk, S Thunder, F Müller, N Laleni, Y Raffel, M Lederer, L Pirro, ... IEEE Transactions on Nanotechnology, 2023 | 7 | 2023 |
| 28 nm high-k-metal gate ferroelectric field effect transistors based synapses—A comprehensive overview Y Raffel, F Müller, S Thunder, MR Sk, M Lederer, L Pirro, S Beyer, ... Memories-Materials, Devices, Circuits and Systems 4, 100048, 2023 | 6 | 2023 |
| Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET MR Sk, S Pande, F Müller, Y Raffel, M Lederer, L Pirro, S Beyer, K Seidel, ... Memories-Materials, Devices, Circuits and Systems 4, 100050, 2023 | 2 | 2023 |
| Demonstration of an Oscillatory Neuron using SiO-based Memristive Switches S Roy, S Pande, MR Sk, E Bhattacharya, B Chakrabarti Device Research Conference (DRC 2024), 2024 | | 2024 |
| FeFET based LIF Neuron with Learnable Threshold and Time S Pande, MR Sk, Y Raffel, M Lederer, K Seidel, A Chakravorty, S De, ... Device Research Conference (DRC 2024), 2024 | | 2024 |
| Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility A Sunil, M Rana SK, M Lederer, Y Raffel, F Müller, R Olivo, R Hoffmann, ... Advanced Intelligent Systems 6 (4), 2300461, 2024 | | 2024 |
| Spike-Time Dependent Plasticity in HfO₂-Based Ferroelectric FET Synapses SM Rana, S Roy, M Lederer, Y Raffel, L Pirro, T Chohan, K Seidel, S De, ... 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
Bhaswar ChakrabartiAssistant Professor, Indian Institute of Technology MadrasVerified email at ee.iitm.ac.in