Articles with public access mandates - Yi HanLearn more
Not available anywhere: 9
Interface engineering for steep slope cryogenic MOSFETs
B Richstein, Y Han, Q Zhao, L Hellmich, J Klos, S Scholz, LR Schreiber, ...
IEEE Electron Device Letters 43 (12), 2149-2152, 2022
Mandates: German Research Foundation
Cryogenic characteristics of UTBB SOI Schottky-barrier MOSFETs
Y Han, J Sun, F Xi, JH Bae, D Grützmacher, QT Zhao
Solid-State Electronics 194, 108351, 2022
Mandates: Chinese Academy of Sciences, German Research Foundation
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
Y Han, F Xi, F Allibert, I Radu, S Prucnal, JH Bae, S Hoffmann-Eifert, ...
Solid-State Electronics 192, 108263, 2022
Mandates: Chinese Academy of Sciences, German Research Foundation
High performance 5 nm Si nanowire FETs with a record small SS= 2.3 mV/dec and high transconductance at 5.5 k enabled by dopant segregated silicide Source/Drain
Y Han, J Sun, JH Bae, D Grützmacher, J Knoch, QT Zhao
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
Mandates: German Research Foundation
Ferroelectric Schottky barrier MOSFET as analog synapses for neuromorphic computing
F Xi, A Grenmy, J Zhang, Y Han, JH Bae, D Grützmacher, QT Zhao
ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC …, 2022
Mandates: Federal Ministry of Education and Research, Germany
Impact of the backgate on the Performance of SOI UTBB nMOSFETs at cryogenic temperatures
Y Han, F Xi, F Allibert, I Radu, S Prucnal, JH Bae, S Hoffmann-Eifert, ...
2021 Joint International EUROSOI Workshop and International Conference on …, 2021
Mandates: German Research Foundation
Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
Y Junk, M Frauenrath, Y Han, J Sun, OC Diaz, JH Bae, JM Hartmann, ...
2023 International VLSI Symposium on Technology, Systems and Applications …, 2023
Mandates: Federal Ministry of Education and Research, Germany
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs
Y Junk, M Frauenrath, Y Han, OC Diaz, JH Bae, JM Hartmann, ...
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
Mandates: Federal Ministry of Education and Research, Germany
(Invited, Digital Presentation) Approach to Neuromorphic Computing with Ferroelectric Schottky Barrier FETs
QT Zhao, F Xi, Y Han, JH Bae, D Gruetzmacher
Electrochemical Society Meeting Abstracts 241, 1298-1298, 2022
Mandates: Federal Ministry of Education and Research, Germany
Available somewhere: 13
Artificial synapses based on ferroelectric Schottky barrier field-effect transistors for neuromorphic applications
F Xi, Y Han, M Liu, JH Bae, A Tiedemann, D Grützmacher, QT Zhao
ACS applied materials & interfaces 13 (27), 32005-32012, 2021
Mandates: German Research Foundation
Structural properties of GeSn thin films grown by molecular beam epitaxy
ZP Zhang, YX Song, ZYS Zhu, Y Han, QM Chen, YY Li, LY Zhang, ...
AIP Advances 7 (4), 2017
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Steep switching Si nanowire p-FETs with dopant segregated silicide source/drain at cryogenic temperature
Y Han, J Sun, B Richstein, F Allibert, I Radu, JH Bae, D Grützmacher, ...
IEEE Electron Device Letters 43 (8), 1187-1190, 2022
Mandates: German Research Foundation
Vertical GeSn nanowire MOSFETs for CMOS beyond silicon
M Liu, Y Junk, Y Han, D Yang, JH Bae, M Frauenrath, JM Hartmann, ...
Communications Engineering 2 (1), 7, 2023
Mandates: Federal Ministry of Education and Research, Germany
Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy
ZP Zhang, YX Song, YY Li, XY Wu, ZYS Zhu, Y Han, LY Zhang, H Huang, ...
AIP Advances 7 (10), 2017
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy
Z Zhu, Y Song, Z Zhang, H Sun, Y Han, Y Li, L Zhang, Z Xue, Z Di, ...
Journal of Applied Physics 122 (9), 2017
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures
C Roemer, N Dersch, G Darbandy, M Schwarz, Y Han, QT Zhao, ...
Solid-State Electronics 207, 108686, 2023
Mandates: German Research Foundation
Abnormal strain in suspended GeSn microstructures
Y Han, Y Song, X Chen, Z Zhang, J Liu, Y Li, Z Zhu, H Huang, J Shao, ...
Materials Research Express 5 (3), 035901, 2018
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes
F Xi, A Grenmyr, J Zhang, Y Han, JH Bae, D Grützmacher, QT Zhao
Advanced Electronic Materials 9 (3), 2201155, 2023
Mandates: Federal Ministry of Education and Research, Germany
A comparative study of selective dry and wet etching of germanium–tin (Ge1− xSnx) on germanium
Y Han, Y Li, Y Song, C Chi, Z Zhang, J Liu, Z Zhu, S Wang
Semiconductor Science and Technology 33 (8), 085011, 2018
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors
J Knoch, B Richstein, Y Han, M Frentzen, L Rainer Schreiber, J Klos, ...
physica status solidi (a) 220 (13), 2300069, 2023
Mandates: German Research Foundation
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