| Non-polar and semi-polar GaN substrates, devices, and methods for making them AD Hanser, EA Preble, L Liu, TL Clites, KR Evans US Patent 7,727,874, 2010 | 325 | 2010 |
| Method for making group III nitride articles AD Hanser, L Liu, EA Preble, D Tsvetkov, NM Williams, X Xu US Patent 8,435,879, 2013 | 272 | 2013 |
| Accurate dependence of gallium nitride thermal conductivity on dislocation density C Mion, JF Muth, EA Preble, D Hanser Applied Physics Letters 89 (9), 2006 | 252 | 2006 |
| Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement EA Preble, L Liu, AD Hanser, NM Williams, X Xu US Patent 7,897,490, 2011 | 250 | 2011 |
| High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma SA Smith, CA Wolden, MD Bremser, AD Hanser, RF Davis, WV Lampert Applied physics letters 71 (25), 3631-3633, 1997 | 235 | 1997 |
| GaN substrates for III-nitride devices T Paskova, DA Hanser, KR Evans Proceedings of the IEEE 98 (7), 1324-1338, 2009 | 222 | 2009 |
| Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon JJ Cuomo, NM Williams, AD Hanser, EP Carlson, DT Thomas US Patent 6,692,568, 2004 | 190 | 2004 |
| GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ... Applied physics letters 89 (1), 2006 | 140 | 2006 |
| Pinholes, dislocations and strain relaxation in InGaN B Jahnen, M Albrecht, W Dorsch, S Christiansen, HP Strunk, D Hanser, ... MRS Internet Journal of Nitride Semiconductor Research 3, 1-10, 1998 | 112 | 1998 |
| Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier Y Zhou, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ... Journal of applied physics 101 (2), 2007 | 111 | 2007 |
| Green light emitting diodes on a-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, Y Xia, C Wetzel, EA Preble, L Liu, T Paskova, ... Applied Physics Letters 92 (24), 2008 | 100 | 2008 |
| High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire T Paskova, R Kroeger, S Figge, D Hommel, V Darakchieva, B Monemar, ... Applied Physics Letters 89 (5), 2006 | 99 | 2006 |
| Surface preparation of substrates from bulk GaN crystals D Hanser, M Tutor, E Preble, M Williams, X Xu, D Tsvetkov, L Liu Journal of Crystal Growth 305 (2), 372-376, 2007 | 93 | 2007 |
| MIIIN based materials and methods and apparatus for producing same JJ Cuomo, NM Williams, AD Hanser, EP Carlson, DT Thomas US Patent 6,784,085, 2004 | 92 | 2004 |
| Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Y Zhou, C Ahyi, T Isaacs-Smith, M Bozack, CC Tin, J Williams, M Park, ... Solid-State Electronics 52 (5), 756-764, 2008 | 84 | 2008 |
| Light-emitting diode development on polar and non-polar GaN substrates C Wetzel, M Zhu, J Senawiratne, T Detchprohm, PD Persans, L Liu, ... Journal of Crystal Growth 310 (17), 3987-3991, 2008 | 83 | 2008 |
| Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, L Zhao, S You, C Wetzel, EA Preble, ... Applied Physics Letters 96 (5), 2010 | 80 | 2010 |
| Thermal conductivity, dislocation density and GaN device design C Mion, JF Muth, EA Preble, D Hanser Superlattices and Microstructures 40 (4-6), 338-342, 2006 | 70 | 2006 |
| High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate Y Zhou, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ... Solid-state electronics 50 (11-12), 1744-1747, 2006 | 61 | 2006 |
| Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same EA Preble, D Tsvetkov, AD Hanser, NM Williams, X Xu US Patent 7,777,217, 2010 | 58 | 2010 |
