Articles with public access mandates - Stephan WirthsLearn more
Not available anywhere: 9
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
M Oehme, D Buca, K Kostecki, S Wirths, B Holländer, E Kasper, J Schulze
Journal of crystal growth 384, 71-76, 2013
Mandates: German Research Foundation
High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
S Wirths, D Stange, MA Pampillón, AT Tiedemann, G Mussler, A Fox, ...
ACS applied materials & interfaces 7 (1), 62-67, 2015
Mandates: European Commission, Government of Spain
Line tunneling dominating charge transport in SiGe/Si heterostructure TFETs
S Blaeser, S Glass, C Schulte-Braucks, K Narimani, N von den Driesch, ...
IEEE Transactions on Electron Devices 63 (11), 4173-4178, 2016
Mandates: European Commission
Monolithic Integration of III-V on silicon for photonic and electronic applications
S Mauthe, H Schmid, B Mayer, S Wirths, C Convertino, Y Baumgartner, ...
2018 76th Device Research Conference (DRC), 1-2, 2018
Mandates: European Commission
GeSn for nanoelectronic and optical applications
D Buca, S Wirths, D Stange, N von den Driesch, T Stoica, D Grützmacher, ...
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
Mandates: European Commission
Experimental demonstration of planar SiGe on Si TFETs with counter doped pocket
S Blaeser, S Richter, S Wirths, S Trellenkamp, D Buca, QT Zhao, S Manti
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
Mandates: European Commission
Optimisation of the carrier lifetime profile in 1.2 KV planar and trench SiC MOSFETs
K Naydenov, N Donato, F Udrea, A Mihaila, G Romano, S Wirths, L Knoll
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
Mandates: UK Engineering and Physical Sciences Research Council
Si based tunnel FETs: status and perspectives
QT Zhao, L Knoll, S Richter, A Schäfer, S Wirths, D Buca, S Mantl
2014 Silicon Nanoelectronics Workshop (SNW), 1-2, 2014
Mandates: European Commission
Surge current capability evaluation of 6.5 kV SiC MOSFETs with 3D cell layouts
K Naydenov, N Donato, F Udrea, A Mihaila, G Romano, S Wirths, L Knoll
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
Mandates: UK Engineering and Physical Sciences Research Council
Available somewhere: 27
Lasing in direct-bandgap GeSn alloy grown on Si
S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ...
Nature photonics 9 (2), 88-92, 2015
Mandates: Swiss National Science Foundation
Optically pumped GeSn microdisk lasers on Si
D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ...
ACS photonics 3 (7), 1279-1285, 2016
Mandates: German Research Foundation
Room-temperature lasing from monolithically integrated GaAs microdisks on silicon
S Wirths, BF Mayer, H Schmid, M Sousa, J Gooth, H Riel, KE Moselund
ACS nano 12 (3), 2169-2175, 2018
Mandates: European Commission
SiGeSn ternaries for efficient group IV heterostructure light emitters
N von den Driesch, D Stange, S Wirths, D Rainko, I Povstugar, A Savenko, ...
Small 13 (16), 1603321, 2017
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
High-mobility GaSb nanostructures cointegrated with InAs on Si
M Borg, H Schmid, J Gooth, MD Rossell, D Cutaia, M Knoedler, ...
ACS nano 11 (3), 2554-2560, 2017
Mandates: Swiss National Science Foundation, European Commission
Towards Nanowire Tandem Junction Solar Cells on Silicon
MT Borgström, MH Magnusson, F Dimroth, G Siefer, O Höhn, H Riel, ...
IEEE Journal of Photovoltaics 8 (3), 733 - 740, 2018
Mandates: Knut and Alice Wallenberg Foundation, Swedish Research Council, European …
Ballistic one-dimensional InAs nanowire cross-junction interconnects
J Gooth, M Borg, H Schmid, V Schaller, S Wirths, K Moselund, M Luisier, ...
Nano letters 17 (4), 2596-2602, 2017
Mandates: European Commission
Novel SiGe/Si line tunneling TFET with high Ion at low VDD and constant SS
S Blaeser, S Glass, C Schulte-Braucks, K Narimani, NVD Driesch, ...
2015 IEEE international electron devices meeting (IEDM), 22.3. 1-22.3. 4, 2015
Mandates: European Commission
Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
M Knoedler, N Bologna, H Schmid, M Borg, KE Moselund, S Wirths, ...
Crystal Growth & Design 17 (12), 6297-6302, 2017
Mandates: Swiss National Science Foundation, European Commission
Manipulating surface states of III–V nanowires with uniaxial stress
G Signorello, S Sant, N Bologna, M Schraff, U Drechsler, H Schmid, ...
Nano letters 17 (5), 2816-2824, 2017
Mandates: Swiss National Science Foundation, European Commission
Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors
S Mukherjee, N Kodali, D Isheim, S Wirths, JM Hartmann, D Buca, ...
Physical Review B 95 (16), 161402, 2017
Mandates: US National Science Foundation, US Department of Defense, Natural Sciences …
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