| Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices AD Bykhovski, BL Gelmont, MS Shur Journal of applied physics 81, 6332, 1997 | 432 | 1997 |
| Monte Carlo simulation of electron transport in gallium nitride B Gelmont, K Kim, M Shur Journal of applied physics 74 (3), 1818-1821, 1993 | 391 | 1993 |
| The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure A Bykhovski, B Gelmont, M Shur Journal of applied physics 74 (11), 6734-6739, 1993 | 380 | 1993 |
| THz-spectroscopy of biological molecules TR Globus, DL Woolard, T Khromova, TW Crowe, M Bykhovskaia, ... Journal of biological physics 29 (2), 89-100, 2003 | 316 | 2003 |
| Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN M Shur, B Gelmont, M Asif Khan Journal of electronic materials 25 (5), 777-785, 1996 | 302 | 1996 |
| Piezoresistive effect in wurtzite n‐type GaN AD Bykhovski, VV Kaminski, MS Shur, QC Chen, MA Khan Applied physics letters 68, 818, 1996 | 255 | 1996 |
| Coulomb gap in disordered systems: computer simulation SD Baranovskii, AL Efros, BL Gelmont, BI Shklovskii Journal of Physics C: Solid State Physics 12, 1023, 1979 | 211 | 1979 |
| Polar optical‐phonon scattering in three‐and two‐dimensional electron gases BL Gelmont, M Shur, M Stroscio Journal of applied physics 77 (2), 657-660, 1995 | 171 | 1995 |
| Submillimeter-wave phonon modes in DNA macromolecules DL Woolard, TR Globus, BL Gelmont, M Bykhovskaia, AC Samuels, ... Physical Review E 65 (5), 051903, 2002 | 156 | 2002 |
| Terahertz Fourier transform characterization of biological materials in a liquid phase T Globus, D Woolard, TW Crowe, T Khromova, B Gelmont, J Hesler Journal of Physics D: Applied Physics 39, 3405, 2006 | 119 | 2006 |
| Current‐voltage characteristics of strained piezoelectric structures A Bykhovski, B Gelmont, M Shur, A Khan Journal of applied physics 77 (4), 1616-1620, 1995 | 118 | 1995 |
| Two-dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition MA Khan, Q Chen, CJ Sun, M Shur, B Gelmont Applied physics letters 67 (10), 1429-1431, 1995 | 117 | 1995 |
| Theory of gain spectra for quantum cascade lasers and temperature dependence of their characteristics at low and moderate carrier concentrations VB Gorfinkel, S Luryi, B Gelmont IEEE Journal of Quantum Electronics 32 (11), 1995-2003, 1996 | 113 | 1996 |
| Acceptor levels in diamond-type semiconductors BL Gelmont, MI Dyakonov SOVIET PHYSICS SEMICONDUCTORS-USSR 5 (11), 1905-&, 1972 | 111 | 1972 |
| The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures R Gaska, JW Yang, AD Bykhovski, MS Shur, VV Kaminski, SM Soloviov Applied physics letters 72, 64, 1998 | 110 | 1998 |
| Auger recombination in direct-gap p-type semiconductors BL Gel'mont, ZN Sokolova, IN Yassievich Sov. Phys. Semicond. 16 (4), 382-387, 1982 | 106* | 1982 |
| Strain and charge distribution in GaN‐AlN‐GaN semiconductor‐insulator‐semiconductor structure for arbitrary growth orientation A Bykhovski, B Gelmont, M Shur Applied physics letters 63 (16), 2243-2245, 1993 | 99 | 1993 |
| Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures AD Bykhovski, BL Gelmont, MS Shur Journal of applied physics 78 (6), 3691-3696, 1995 | 98 | 1995 |
| Theory of junction between two-dimensional electron gas and p-type semiconductor B Gelmont, M Shur, C Moglesture IEEE transactions on electron devices 39 (5), 1216-1222, 1992 | 92 | 1992 |
| Sub-millimetre wave absorption spectra of artificial RNA molecules T Globus, M Bykhovskaia, D Woolard, B Gelmont Journal of Physics D: Applied Physics 36, 1314, 2003 | 89 | 2003 |
