| CMOS-compatible bias-tunable dual-band detector based on GeSn/Ge/Si coupled photodiodes E Talamas Simola, V Kiyek, A Ballabio, V Schlykow, J Frigerio, ... ACS photonics 8 (7), 2166-2173, 2021 | 68 | 2021 |
| Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays A Di Bartolomeo, M Passacantando, G Niu, V Schlykow, G Lupina, ... Nanotechnology 27 (48), 485707, 2016 | 56 | 2016 |
| Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration N Taoka, G Capellini, V Schlykow, M Montanari, P Zaumseil, O Nakatsuka, ... Materials Science in Semiconductor Processing 70, 139-144, 2017 | 26 | 2017 |
| Epitaxial GeSn/Ge vertical nanowires for p-type field-effect transistors with enhanced performance M Liu, D Yang, A Shkurmanov, JH Bae, V Schlykow, JM Hartmann, ... ACS Applied Nano Materials 4 (1), 94-101, 2020 | 20 | 2020 |
| Photoluminescence from GeSn nano-heterostructures V Schlykow, P Zaumseil, MA Schubert, O Skibitzki, Y Yamamoto, ... Nanotechnology 29 (41), 415702, 2018 | 11 | 2018 |
| Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si (001) V Schlykow, WM Klesse, G Niu, N Taoka, Y Yamamoto, O Skibitzki, ... Applied Physics Letters 109 (20), 2016 | 11 | 2016 |
| Ge (Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas V Schlykow, CL Manganelli, F Römer, C Clausen, L Augel, J Schulze, ... Nanotechnology 31 (34), 345203, 2020 | 10 | 2020 |
| Vertical heterojunction Ge0. 92Sn0. 08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact M Liu, K Mertens, N von den Driesch, V Schlykow, T Grap, F Lentz, ... Solid-State Electronics 168, 107716, 2020 | 8 | 2020 |
| Vertical heterojunction Ge0. 92 Sn0. 08/Ge GAA nanowire pMOSFETs: Low SS of 67 mV/dec, small DIBL of 24 mV/V and highest gm, ext of 870 μS/μm M Liu, V Schlykow, JM Hartmann, J Knoch, D Grützmacher, D Buca, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 4 | 2020 |
| MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate D Schwarz, SC Schäfer, L Seidel, HS Funk, D Weißhaupt, M Oehme, ... 2021 44th International Convention on Information, Communication and …, 2021 | 2 | 2021 |
| Recovery of cycling-induced degradation of interfacial SiO2 in HfO2-FeFET and its impact on retention characteristics V Schlykow, K Suzuki, Y Yoshimura, T Hamai, K Sakuma, K Matsuo, ... Japanese Journal of Applied Physics 63 (2), 02SP43, 2024 | | 2024 |
| Selective growth and characterization of GeSn nanostructures on patterned Si wafers VD Schlykow BTU Cottbus-Senftenberg, 2019 | | 2019 |
| Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays–Supplementary Information A Di Bartolomeo, M Passacantando, G Niu, V Schlykow, G Lupina, ... | | |
Giovanni CapelliniFull Professor, Università Roma Tre and IHP Leibniz Institute for High Performance MicroelectronicsVerified email at uniroma3.it