MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019 | 156 | 2019 |
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ... Physical Review X 9 (4), 041027, 2019 | 134 | 2019 |
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020 | 122 | 2020 |
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020 | 87 | 2020 |
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ... IEEE Electron Device Letters 42 (6), 899-902, 2021 | 86 | 2021 |
Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ... ACS Applied Materials & Interfaces 13 (34), 40817-40829, 2021 | 60 | 2021 |
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (25), 2020 | 56 | 2020 |
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021 | 51 | 2021 |
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao APL Materials 9 (10), 2021 | 48 | 2021 |
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (14), 2020 | 46 | 2020 |
Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1–x)2O3 Heteroepitaxial Thin Films Y Song, P Ranga, Y Zhang, Z Feng, HL Huang, MD Santia, SC Badescu, ... ACS applied materials & interfaces 13 (32), 38477-38490, 2021 | 35 | 2021 |
Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ... Applied Physics Letters 119 (12), 2021 | 28 | 2021 |
Thermal Transport across Metal/β-Ga2O3 Interfaces J Shi, C Yuan, HL Huang, J Johnson, C Chae, S Wang, R Hanus, S Kim, ... ACS Applied Materials & Interfaces 13 (24), 29083-29091, 2021 | 27 | 2021 |
Band offsets at metalorganic chemical vapor deposited β-(AlxGa1− x) 2O3/β-Ga2O3 interfaces—Crystalline orientation dependence AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao Journal of Vacuum Science & Technology A 39 (6), 2021 | 25* | 2021 |
Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3 HL Huang, C Chae, JM Johnson, A Senckowski, S Sharma, U Singisetti, ... APL Materials 11 (6), 2023 | 22 | 2023 |
Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs Y Song, A Bhattacharyya, A Karim, D Shoemaker, HL Huang, S Roy, ... ACS Applied Materials & Interfaces 15 (5), 7137-7147, 2023 | 22 | 2023 |
Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, L Meng, A Fiedler, HL Huang, AT Neal, ... Journal of Applied Physics 131 (14), 2022 | 22 | 2022 |
Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition MR Karim, Z Chen, Z Feng, HL Huang, JM Johnson, MJ Tadjer, J Hwang, ... Journal of Vacuum Science & Technology A 39 (2), 2021 | 21 | 2021 |
Cumulative impacts of proton irradiation on the self-heating of AlGaN/GaN HEMTs B Chatterjee, D Shoemaker, Y Song, T Shi, HL Huang, D Keum, ... ACS Applied Electronic Materials 2 (4), 980-991, 2020 | 20 | 2020 |
Atomic scale mechanism of β to γ phase transformation in gallium oxide HL Huang, JM Johnson, C Chae, A Senckowski, MH Wong, J Hwang Applied Physics Letters 122 (25), 2023 | 16 | 2023 |