Articles with public access mandates - Lezhi. WangLearn more
Not available anywhere: 6
Stateful reconfigurable logic via a single-voltage-gated spin hall-effect driven magnetic tunnel junction in a spintronic memory
H Zhang, W Kang, L Wang, KL Wang, W Zhao
IEEE Transactions on Electron Devices 64 (10), 4295-4301, 2017
Mandates: National Natural Science Foundation of China
Field-free switching of perpendicular magnetization through voltage-gated spin-orbit torque
SZ Peng, JQ Lu, WX Li, LZ Wang, H Zhang, X Li, KL Wang, WS Zhao
2019 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2019
Mandates: National Natural Science Foundation of China
Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale
Y Zhang, Z Zhang, L Wang, J Nan, Z Zheng, X Li, K Wong, Y Wang, ...
Applied Physics Letters 111 (5), 2017
Mandates: National Natural Science Foundation of China
Low-temperature performance of nanoscale perpendicular magnetic tunnel junctions with double MgO-interface free layer
K Cao, H Li, W Cai, J Wei, L Wang, Y Hu, Q Jiang, H Cui, C Zhao, W Zhao
IEEE Transactions on Magnetics 55 (3), 1-4, 2018
Mandates: National Natural Science Foundation of China
Large spin Hall effect of perpendicularly magnetized β-W/CoFeB/MgO layers with high thermal stability
L Wang, K Shi, S Peng, K Cao, H Yang, J Gao, W Zhao, C Zhao
Japanese Journal of Applied Physics 58 (5), 050903, 2019
Mandates: National Natural Science Foundation of China
Novel magnetic tunneling junction memory cell with negative capacitance-amplified voltage-controlled magnetic anisotropy effect
L Zeng, T Gao, D Zhang, S Peng, L Wang, F Gong, X Qin, M Long, ...
IEEE Transactions on Electron Devices 64 (12), 4919-4927, 2017
Mandates: National Natural Science Foundation of China
Available somewhere: 7
Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy
W Zhao, X Zhao, B Zhang, K Cao, L Wang, W Kang, Q Shi, M Wang, ...
Materials 9 (1), 41, 2016
Mandates: National Natural Science Foundation of China
Voltage-controlled magnetic tunnel junctions for processing-in-memory implementation
L Wang, W Kang, F Ebrahimi, X Li, Y Huang, C Zhao, KL Wang, W Zhao
IEEE Electron Device Letters 39 (3), 440-443, 2018
Mandates: National Natural Science Foundation of China
Interfacial perpendicular magnetic anisotropy in sub-20 nm tunnel junctions for large-capacity spin-transfer torque magnetic random-access memory
S Peng, W Kang, M Wang, K Cao, X Zhao, L Wang, Y Zhang, Y Zhang, ...
IEEE Magnetics Letters 8, 1-5, 2017
Mandates: National Natural Science Foundation of China
Thermal spin torques in magnetic insulators
H Yu, SD Brechet, P Che, FA Vetro, M Collet, S Tu, YG Zhang, Y Zhang, ...
Physical Review B 95 (10), 104432, 2017
Mandates: US National Science Foundation, Swiss National Science Foundation, National …
Enhancement of perpendicular magnetic anisotropy through Fe insertion at the CoFe/W interface
S Peng, L Wang, X Li, Z Wang, J Zhou, J Qiao, R Chen, Y Zhang, ...
IEEE Transactions on Magnetics 54 (11), 1-5, 2018
Mandates: US National Science Foundation, National Natural Science Foundation of China
Tuning the pinning direction of giant magnetoresistive sensor by post annealing process
Z Cao, Y Wei, W Chen, S Yan, L Lin, Z Li, L Wang, H Yang, Q Leng, ...
Science China Information Sciences 64, 1-7, 2021
Mandates: National Natural Science Foundation of China
Interface control of domain wall depinning field
Y Huang, X Li, L Wang, G Yu, KL Wang, W Zhao
AIP Advances 8 (5), 2018
Mandates: US National Science Foundation, US Department of Defense, National Natural …
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