Iron and its complexes in silicon AA Istratov, H Hieslmair, ER Weber Applied Physics A 69 (1), 13-44, 1999 | 725 | 1999 |
Iron contamination in silicon technology AA Istratov, H Hieslmair, ER Weber Applied Physics A 70, 489-534, 2000 | 477 | 2000 |
Intrinsic diffusion coefficient of interstitial copper in silicon AA Istratov, C Flink, H Hieslmair, ER Weber, T Heiser Physical review letters 81 (6), 1243, 1998 | 307 | 1998 |
Gettering of metallic impurities in photovoltaic silicon SA McHugo, H Hieslmair, ER Weber Applied Physics A 64, 127-137, 1997 | 148 | 1997 |
Electrical and recombination properties of copper‐silicide precipitates in silicon AA Istratov, H Hedemann, M Seibt, OF Vyvenko, W Schröter, T Heiser, ... Journal of The Electrochemical Society 145 (11), 3889, 1998 | 146 | 1998 |
X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon OF Vyvenko, T Buonassisi, AA Istratov, H Hieslmair, AC Thompson, ... Journal of Applied Physics 91 (6), 3614-3617, 2002 | 111 | 2002 |
Solar cell structures, photovoltaic panels and corresponding processes H Hieslmair US Patent 8,853,527, 2014 | 100 | 2014 |
Diffusion, solubility and gettering of copper in silicon AA Istratov, C Flink, H Hieslmair, SA McHugo, ER Weber Materials Science and Engineering: B 72 (2-3), 99-104, 2000 | 99 | 2000 |
Out-diffusion and precipitation of copper in silicon: an electrostatic model C Flink, H Feick, SA McHugo, W Seifert, H Hieslmair, T Heiser, AA Istratov, ... Physical Review Letters 85 (23), 4900, 2000 | 89 | 2000 |
Silicon/germanium particle inks, doped particles, printing and processes for semiconductor applications H Hieslmair, VK Dioumaev, S Chiruvolu, H Du US Patent 8,632,702, 2014 | 84 | 2014 |
Dynamic design of solar cell structures, photovoltaic modules and corresponding processes H Hieslmair US Patent App. 12/070,381, 2008 | 77 | 2008 |
Gettering of iron by oxygen precipitates H Hieslmair, AA Istratov, SA McHugo, C Flink, T Heiser, ER Weber Applied Physics Letters 72 (12), 1460-1462, 1998 | 75 | 1998 |
Interstitial copper-related center in n-type silicon AA Istratov, H Hieslmair, C Flink, T Heiser, ER Weber Applied physics letters 71 (16), 2349-2351, 1997 | 72 | 1997 |
Gettering simulator: physical basis and algorithm H Hieslmair, S Balasubramanian, AA Istratov, ER Weber Semiconductor science and technology 16 (7), 567, 2001 | 66 | 2001 |
Influence of interstitial copper on diffusion length and lifetime of minority carriers in -type silicon AA Istratov, C Flink, H Hieslmair, T Heiser, ER Weber Applied physics letters 71 (15), 2121-2123, 1997 | 66 | 1997 |
Transient ion drift detection of low level copper contamination in silicon T Heiser, S McHugo, H Hieslmair, ER Weber Applied physics letters 70 (26), 3576-3578, 1997 | 61 | 1997 |
Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates H Hieslmair, S Chiruvolu, H Du US Patent 7,892,872, 2011 | 60 | 2011 |
The dissociation energy and the charge state of a copper-pair center in silicon AA Istratov, H Hieslmair, T Heiser, C Flink, ER Weber Applied physics letters 72 (4), 474-476, 1998 | 56 | 1998 |
High throughput ion-implantation for silicon solar cells H Hieslmair, L Mandrell, I Latchford, M Chun, J Sullivan, B Adibi Energy Procedia 27, 122-128, 2012 | 54 | 2012 |
Defect recognition and impurity detection techniques in crystalline silicon for solar cells AA Istratov, H Hieslmair, OF Vyvenko, ER Weber, R Schindler Solar energy materials and solar cells 72 (1-4), 441-451, 2002 | 52 | 2002 |