| Semiconductor device including an InGaAIN layer N Sawaki, Y Honda, N Koide, K Furukawa US Patent 6,635,901, 2003 | 196* | 2003 |
| Correlation between dislocations and leakage current of pn diodes on a free-standing GaN substrate S Usami, Y Ando, A Tanaka, K Nagamatsu, M Deki, M Kushimoto, S Nitta, ... Applied Physics Letters 112 (18), 2018 | 186 | 2018 |
| Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy Y Honda, Y Kuroiwa, M Yamaguchi, N Sawaki Applied Physics Letters 80 (2), 222-224, 2002 | 161 | 2002 |
| Semiconductor light emitting device and method for producing the same N Koide, J Yamamoto, T Dohkita, N Sawaki, Y Honda, Y Kuroiwa, ... US Patent 6,806,115, 2004 | 151* | 2004 |
| Growth of (11̄01) GaN on a 7-degree off-oriented (0 0 1) Si substrate by selective MOVPE Y Honda, N Kameshiro, M Yamaguchi, N Sawaki Journal of crystal growth 242 (1-2), 82-86, 2002 | 130 | 2002 |
| Growth and properties of semi-polar GaN on a patterned silicon substrate N Sawaki, T Hikosaka, N Koide, S Tanaka, Y Honda, M Yamaguchi Journal of Crystal Growth 311 (10), 2867-2874, 2009 | 116 | 2009 |
| Progress and prospect of the growth of wide-band-gap group III nitrides: Development of the growth method for single-crystal bulk GaN H Amano Japanese Journal of Applied Physics 52 (5R), 050001, 2013 | 112 | 2013 |
| AlGaN-based deep ultraviolet light-emitting diodes fabricated on patterned sapphire substrates M Kim, T Fujita, S Fukahori, T Inazu, C Pernot, Y Nagasawa, A Hirano, ... Applied physics express 4 (9), 092102, 2011 | 110 | 2011 |
| Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique BO Jung, SY Bae, Y Kato, M Imura, DS Lee, Y Honda, H Amano CrystEngComm 16 (11), 2273-2282, 2014 | 101 | 2014 |
| Growth of semi‐polar (11‐22) GaN on a (113) Si substrate by selective MOVPE T Tanikawa, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki physica status solidi c 5 (9), 2966-2968, 2008 | 101 | 2008 |
| Improvement of light extraction efficiency for AlGaN-based deep ultraviolet light-emitting diodes T Inazu, S Fukahori, C Pernot, MH Kim, T Fujita, Y Nagasawa, A Hirano, ... Japanese Journal of Applied Physics 50 (12R), 122101, 2011 | 88 | 2011 |
| Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown H Fukushima, S Usami, M Ogura, Y Ando, A Tanaka, M Deki, ... Applied Physics Express 12 (2), 026502, 2019 | 84 | 2019 |
| Optical and electrical properties of grown on a 7° off-axis (001)Si substrate T Hikosaka, T Narita, Y Honda, M Yamaguchi, N Sawaki Applied physics letters 84 (23), 4717-4719, 2004 | 83 | 2004 |
| Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output M Kaneda, C Pernot, Y Nagasawa, A Hirano, M Ippommatsu, Y Honda, ... Japanese Journal of Applied Physics 56 (6), 061002, 2017 | 77 | 2017 |
| Selective area growth of GaN on Si substrate using SiO 2 mask by metalorganic vapor phase epitaxy YKY Kawaguchi, YHY Honda, HMH Matsushima, MYM Yamaguchi, ... Japanese journal of applied physics 37 (8B), L966, 1998 | 76 | 1998 |
| Selective area growth of GaN microstructures on patterned (1 1 1) and (0 0 1) Si substrates Y Honda, Y Kawaguchi, Y Ohtake, S Tanaka, M Yamaguchi, N Sawaki Journal of crystal growth 230 (3-4), 346-350, 2001 | 70 | 2001 |
| On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR T Sakai, M Kushimoto, Z Zhang, N Sugiyama, LJ Schowalter, Y Honda, ... Applied Physics Letters 116 (12), 2020 | 63 | 2020 |
| Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy X Yang, S Nitta, K Nagamatsu, SY Bae, HJ Lee, Y Liu, M Pristovsek, ... Journal of Crystal Growth 482, 1-8, 2018 | 63 | 2018 |
| Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes L Sang, B Ren, M Sumiya, M Liao, Y Koide, A Tanaka, Y Cho, Y Harada, ... Applied physics letters 111 (12), 2017 | 61 | 2017 |
| Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region BO Jung, SY Bae, SY Kim, S Lee, JY Lee, DS Lee, Y Kato, Y Honda, ... Nano Energy 11, 294-303, 2015 | 58 | 2015 |
