| 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell CJ Lin, SH Kang, YJ Wang, K Lee, X Zhu, WC Chen, X Li, WN Hsu, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 421 | 2009 |
| Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device WC Chen, K Lee, X Zhu, SH Kang US Patent 9,245,608, 2016 | 109 | 2016 |
| Interfacial and annealing effects on magnetic properties of CoFeB thin films YH Wang, WC Chen, SY Yang, KH Shen, C Park, MJ Kao, MJ Tsai Journal of applied physics 99 (8), 2006 | 109 | 2006 |
| Fabricating a magnetic tunnel junction storage element WC Chen, SH Kang US Patent 8,981,502, 2015 | 105 | 2015 |
| Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer WC Chen, SH Kang US Patent 8,362,580, 2013 | 104 | 2013 |
| Adjacent-reference and self-reference sensing scheme with novel orthogonal wiggle MRAM cell CC Hung, YS Chen, DY Wang, YJ Lee, WC Chen, YH Wang, CT Yen, ... 2006 International electron devices meeting, 1-4, 2006 | 104 | 2006 |
| Strain induced reduction of switching current in spin-transfer torque switching devices X Zhu, X Li, WC Chen, SH Kang US Patent 8,704,320, 2014 | 88 | 2014 |
| Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device WC Chen, K Lee, X Zhu, SH Kang US Patent 9,935,258, 2018 | 82 | 2018 |
| Amorphous alloy space for perpendicular MTJs K Lee, WC Chen, S Kang US Patent 9,548,445, 2017 | 82 | 2017 |
| Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectors X Li, SH Kang, WC Chen US Patent 10,460,817, 2019 | 77 | 2019 |
| Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch Y Lu, C Park, WC Chen US Patent 9,269,893, 2016 | 77 | 2016 |
| Amorphous spacerlattice spacer for perpendicular MTJs K Lee, WC Chen, SH Kang US Patent 9,214,624, 2015 | 76 | 2015 |
| Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015 | 71 | 2015 |
| Magnetic storage element utilizing improved pinned layer stack WC Chen, SH Kang, X Zhu, X Li US Patent 8,564,080, 2013 | 63 | 2013 |
| Reduction in critical current density for spin torque transfer switching with composite free layer CT Yen, WC Chen, DY Wang, YJ Lee, CT Shen, SY Yang, CH Tsai, ... Applied Physics Letters 93 (9), 2008 | 56 | 2008 |
| Methods of integrated shielding into MTJ device for MRAM WC Chen, X Li, SH Kang US Patent 8,557,610, 2013 | 55 | 2013 |
| Self-compensation of stray field of perpendicular magnetic elements WC Chen, X Zhu, X Li, Y Lu, C Park, SH Kang US Patent 10,043,967, 2018 | 53 | 2018 |
| Embedded magnetoresistive random access memory (MRAM) integration with top contacts Y Lu, WC Chen, SH Kang US Patent 9,343,659, 2016 | 51 | 2016 |
| De-integrated trench formation for advanced MRAM integration Y Lu, WC Chen, SH Kang US Patent 9,614,143, 2017 | 40 | 2017 |
| Switching film structure for magnetic random access memory (MRAM) cell X Li, WC Chen, Y Lu, K Lee, SH Kang US Patent 9,461,094, 2016 | 40 | 2016 |
Yung-Hung WangIndustrial Technology Research InstituteVerified email at itri.org.tw
