Articles with public access mandates - E A FitzgeraldLearn more
Not available anywhere: 43
Influences of annealing on lithium-ion storage performance of thick germanium film anodes
RA Susantyoko, X Wang, L Sun, W Sasangka, E Fitzgerald, Q Zhang
Nano Energy 12, 521-527, 2015
Mandates: National Research Foundation, Singapore
MOCVD growth of GaN on SEMI-spec 200 mm Si
L Zhang, KH Lee, IM Riko, CC Huang, A Kadir, KE Lee, SJ Chua, ...
Semiconductor Science and Technology 32 (6), 065001, 2017
Mandates: National Research Foundation, Singapore
SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-micron CMOS process and design
EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ...
ECS Transactions 75 (8), 439, 2016
Mandates: National Research Foundation, Singapore
Nanostructured thin film silicon anodes for Li-ion microbatteries
RS Omampuliyur, M Bhuiyan, Z Han, Z Jing, L Li, EA Fitzgerald, ...
Journal of Nanoscience and Nanotechnology 15 (7), 4926-4933, 2015
Mandates: National Research Foundation, Singapore
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
D Kohen, XS Nguyen, RI Made, C Heidelberger, KH Lee, KEK Lee, ...
Journal of Crystal Growth 478, 64-70, 2017
Mandates: National Research Foundation, Singapore
Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate
A Kadir, S Srivastava, Z Li, KEK Lee, WA Sasangka, S Gradecak, SJ Chua, ...
Thin Solid Films 663, 73-78, 2018
Mandates: National Research Foundation, Singapore
GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain
C Heidelberger, EA Fitzgerald
Journal of Applied Physics 123 (16), 2018
Mandates: US National Science Foundation
Metamorphic transistors: Building blocks for hetero-integrated circuits
KE Lee, EA Fitzgerald
MRS Bulletin 41 (3), 210-217, 2016
Mandates: National Research Foundation, Singapore
Towards millimeter-wave phased array circuits and systems for small form factor and power efficient 5G mobile devices
P Choi, DA Antoniadis, EA Fitzgerald
2019 IEEE International Symposium on Phased Array System & Technology (PAST …, 2019
Mandates: National Research Foundation, Singapore
Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers
B Wang, GJ Syaranamual, KH Lee, S Bao, Y Wang, KEK Lee, ...
Semiconductor Science and Technology 35 (9), 095036, 2020
Mandates: National Research Foundation, Singapore
Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
IP Seetoh, CB Soh, L Zhang, KH Patrick Tung, EA Fitzgerald, S Jin Chua
Applied Physics Letters 103 (12), 2013
Mandates: A*Star, Singapore
MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS
WK Loke, KH Lee, Y Wang, CS Tan, EA Fitzgerald, SF Yoon
Semiconductor Science and Technology 33 (11), 115011, 2018
Mandates: National Research Foundation, Singapore
Freestanding high-resolution quantum dot color converters with small pixel sizes
S Srivastava, KE Lee, EA Fitzgerald, SJ Pennycook, S Gradecak
ACS Applied Materials & Interfaces 14 (43), 48995-49002, 2022
Mandates: National Research Foundation, Singapore
High mobility In0.30Ga0.70As MOSHEMTs on low threading dislocation density 200 mm Si substrates: A technology enabler towards heterogeneous integration of …
S Yadav, A Kumar, XS Nguyen, KH Lee, Z Liu, W Xing, S Masudy-Panah, ...
2017 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2017
Mandates: National Research Foundation, Singapore
Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer
Y Wang, B Wang, DFS Eow, J Michel, KEK Lee, SF Yoon, EA Fitzgerald, ...
Semiconductor Science and Technology 33 (10), 104004, 2018
Mandates: National Research Foundation, Singapore
Germanium-on-insulator virtual substrate for InGaP epitaxy
S Bao, KH Lee, C Wang, B Wang, RI Made, SF Yoon, J Michel, ...
Materials Science in Semiconductor Processing 70, 17-23, 2017
Mandates: National Research Foundation, Singapore
Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si (111) substrate
XS Nguyen, XL Goh, L Zhang, Z Zhang, AR Arehart, SA Ringel, ...
Japanese Journal of Applied Physics 55 (6), 060306, 2016
Mandates: National Research Foundation, Singapore
Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures
K Mukherjee, PB Deotare, EA Fitzgerald
Applied Physics Letters 106 (14), 2015
Mandates: National Research Foundation, Singapore
MOCVD growth of high quality InGaAs HEMT layers on large scale Si wafers for heterogeneous integration with Si CMOS
XS Nguyen, S Yadav, KH Lee, D Kohen, A Kumar, RI Made, KEK Lee, ...
IEEE Transactions on Semiconductor Manufacturing 30 (4), 456-461, 2017
Mandates: National Research Foundation, Singapore
Optical antenna enhanced spontaneous emission rate in electrically injected nanoscale III–V led
SA Fortuna, C Heidelberger, K Messer, K Han, EA Fitzgerald, ...
2016 International Semiconductor Laser Conference (ISLC), 1-2, 2016
Mandates: US National Science Foundation
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