| Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors JY Tsai, TC Chang, WH Lo, CE Chen, SH Ho, HM Chen, YH Tai, O Cheng, ... Applied Physics Letters 103 (2), 022106, 2013 | 7 | 2013 |
| Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric JY Tsai, TC Chang, WH Lo, CE Chen, SH Ho, HM Chen, YH Tai, O Cheng, ... Applied Physics Letters 102 (7), 073507, 2013 | 7 | 2013 |
| Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks JY Tsai, TC Chang, CE Chen, SH Ho, KJ Liu, YH Lu, XW Liu, TY Tseng, ... Applied Physics Letters 105 (14), 143505, 2014 | 4 | 2014 |
| Abnormal threshold voltage shift under hot carrier stress in Ti1− xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors JY Tsai, TC Chang, WH Lo, SH Ho, CE Chen, HM Chen, TY Tseng, ... Journal of Applied Physics 114 (12), 124505, 2013 | 3 | 2013 |
