Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble Y Kubo, C Grezes, A Dewes, T Umeda, J Isoya, H Sumiya, N Morishita, ... Physical review letters 107 (22), 220501, 2011 | 484 | 2011 |
Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ... Applied Physics Letters 108 (1), 2016 | 244 | 2016 |
Flux qubits with long coherence times for hybrid quantum circuits M Stern, G Catelani, Y Kubo, C Grezes, A Bienfait, D Vion, D Esteve, ... Physical review letters 113 (12), 123601, 2014 | 185 | 2014 |
Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ... IEEE Transactions on Magnetics 51 (11), 1-7, 2015 | 184 | 2015 |
Multimode storage and retrieval of microwave fields in a spin ensemble C Grezes, B Julsgaard, Y Kubo, M Stern, T Umeda, J Isoya, H Sumiya, ... Physical Review X 4 (2), 021049, 2014 | 163 | 2014 |
Quantum memory for microwave photons in an inhomogeneously broadened spin ensemble B Julsgaard, C Grezes, P Bertet, K Mølmer Physical review letters 110 (25), 250503, 2013 | 159 | 2013 |
Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB| MgO interface X Li, K Fitzell, D Wu, CT Karaba, A Buditama, G Yu, KL Wong, N Altieri, ... Applied Physics Letters 110 (5), 2017 | 128 | 2017 |
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures S Peng, W Zhao, J Qiao, L Su, J Zhou, H Yang, Q Zhang, Y Zhang, ... Applied Physics Letters 110 (7), 2017 | 90 | 2017 |
Storage and retrieval of microwave fields at the single-photon level in a spin ensemble C. Grezes, B. Julsgaard, Y. Kubo, W. L. Ma, M. Stern, A. Bienfait, K ... Physical review A 92 (020301), 2015 | 74 | 2015 |
Towards a Spin-Ensemble Quantum Memory for Superconducting Qubits: Design and Implementation of the Write, Read and Reset Steps C Grèzes Springer, 2015 | 69* | 2015 |
Write error rate and read disturbance in electric-field-controlled magnetic random-access memory C Grezes, H Lee, A Lee, S Wang, F Ebrahimi, X Li, K Wong, JA Katine, ... IEEE Magnetics Letters 8, 1-5, 2016 | 59 | 2016 |
Electron spin resonance detected by a superconducting qubit Y Kubo, I Diniz, C Grezes, T Umeda, J Isoya, H Sumiya, T Yamamoto, ... Physical Review B—Condensed Matter and Materials Physics 86 (6), 064514, 2012 | 54 | 2012 |
Perpendicular magnetic tunnel junction with W seed and capping layers H Almasi, CL Sun, X Li, T Newhouse-Illige, C Bi, KC Price, S Nahar, ... Journal of Applied Physics 121 (15), 2017 | 38 | 2017 |
In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions C Grezes, A Rojas Rozas, F Ebrahimi, JG Alzate, X Cai, JA Katine, ... AIP Advances 6 (7), 2016 | 30 | 2016 |
Predictive materials design of magnetic random-access memory based on nanoscale atomic structure and element distribution X Li, T Sasaki, C Grezes, D Wu, K Wong, C Bi, PV Ong, F Ebrahimi, G Yu, ... Nano letters 19 (12), 8621-8629, 2019 | 25 | 2019 |
Spin-Torque Ferromagnetic Resonance in Stacks C He, G Yu, C Grezes, J Feng, Z Zhao, SA Razavi, Q Shao, A Navabi, X Li, ... Physical Review Applied 10 (3), 034067, 2018 | 25 | 2018 |
Hybrid VC-MTJ/CMOS non-volatile stochastic logic for efficient computing S Wang, S Pal, T Li, A Pan, C Grezes, P Khalili-Amiri, KL Wang, P Gupta Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017 …, 2017 | 22 | 2017 |
A spintronic voltage-controlled stochastic oscillator for event-driven random sampling H Lee, C Grezes, A Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Electron Device Letters 38 (2), 281-284, 2016 | 22 | 2016 |
MTJ variation monitor-assisted adaptive MRAM write S Wang, H Lee, C Grezes, P Khalili, KL Wang, P Gupta Proceedings of the 53rd Annual Design Automation Conference, 1-6, 2016 | 17 | 2016 |
Source line sensing in magneto-electric random-access memory to reduce read disturbance and improve sensing margin H Lee, C Grezes, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang IEEE Magnetics Letters 7, 1-5, 2016 | 17 | 2016 |