Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors R Yao, Z Zheng, M Xiong, X Zhang, X Li, H Ning, Z Fang, W Xie, X Lu, ... Applied Physics Letters 112 (10), 2018 | 101 | 2018 |
High mobility amorphous indium-gallium-zinc-oxide thin-film transistor by aluminum oxide passivation layer S Hu, K Lu, H Ning, Z Zheng, H Zhang, Z Fang, R Yao, M Xu, L Wang, ... IEEE Electron Device Letters 38 (7), 879-882, 2017 | 70 | 2017 |
Effects of annealing temperature on optical band gap of sol-gel tungsten trioxide films G Zhang, K Lu, X Zhang, W Yuan, M Shi, H Ning, R Tao, X Liu, R Yao, ... Micromachines 9 (8), 377, 2018 | 66 | 2018 |
All-sputtered, flexible, bottom-gate IGZO/Al 2 O 3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process Z Zheng, Y Zeng, R Yao, Z Fang, H Zhang, S Hu, X Li, H Ning, J Peng, ... Journal of Materials Chemistry C 5 (28), 7043-7050, 2017 | 65 | 2017 |
Graphene oxide as a promising nanofiller for polymer composite X Fu, J Lin, Z Liang, R Yao, W Wu, Z Fang, W Zou, Z Wu, H Ning, J Peng Surfaces and Interfaces 37, 102747, 2023 | 54 | 2023 |
Recent developments in flexible transparent electrode T Wang, K Lu, Z Xu, Z Lin, H Ning, T Qiu, Z Yang, H Zheng, R Yao, J Peng Crystals 11 (5), 511, 2021 | 53 | 2021 |
Temperature-controlled crystal size of wide band gap nickel oxide and its application in electrochromism M Shi, T Qiu, B Tang, G Zhang, R Yao, W Xu, J Chen, X Fu, H Ning, ... Micromachines 12 (1), 80, 2021 | 51 | 2021 |
High-entropy oxides: advanced research on electrical properties H Li, Y Zhou, Z Liang, H Ning, X Fu, Z Xu, T Qiu, W Xu, R Yao, J Peng Coatings 11 (6), 628, 2021 | 46 | 2021 |
InGaZnO thin-film transistors with back channel modification by organic self-assembled monolayers P Xiao, L Lan, T Dong, Z Lin, W Shi, R Yao, X Zhu, J Peng Applied Physics Letters 104 (5), 2014 | 46 | 2014 |
Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5 L Lan, N Xiong, P Xiao, M Li, H Xu, R Yao, S Wen, J Peng Applied Physics Letters 102 (24), 2013 | 46 | 2013 |
High-performance flexible oxide TFTs: Optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment R Yao, Z Zheng, Z Fang, H Zhang, X Zhang, H Ning, L Wang, J Peng, ... Journal of Materials Chemistry C 6 (10), 2522-2532, 2018 | 44 | 2018 |
Room-Temperature Fabrication of High-Performance Amorphous In–Ga–Zn–O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper H Ning, Y Zeng, Y Kuang, Z Zheng, P Zhou, R Yao, H Zhang, W Bao, ... ACS Applied Materials & Interfaces 9 (33), 27792-27800, 2017 | 40 | 2017 |
Direct patterning of silver electrodes with 2.4 μm channel length by piezoelectric inkjet printing H Ning, R Tao, Z Fang, W Cai, J Chen, Y Zhou, Z Zhu, Z Zheng, R Yao, ... Journal of colloid and interface science 487, 68-72, 2017 | 40 | 2017 |
Morphology modulation of direct inkjet printing by incorporating polymers and surfactants into a sol–gel ink system Z Zhu, H Ning, W Cai, J Wei, S Zhou, R Yao, X Lu, J Zhang, ZW Zhou, ... Langmuir 34 (22), 6413-6419, 2018 | 38 | 2018 |
Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics L Lan, M Xu, J Peng, H Xu, M Li, D Luo, J Zou, H Tao, L Wang, R Yao journal of Applied Physics 110 (10), 2011 | 38 | 2011 |
Research progress of high dielectric constant zirconia-based materials for gate dielectric application J Xie, Z Zhu, H Tao, S Zhou, Z Liang, Z Li, R Yao, Y Wang, H Ning, J Peng Coatings 10 (7), 698, 2020 | 37 | 2020 |
Lattice defects of ZnO and hybrids with GO: Characterization, EPR and optoelectronic properties G Ahmed, M Hanif, K Mahmood, R Yao, H Ning, M Wu, J Khan, Z Liu AIP Advances 8 (2), 2018 | 37 | 2018 |
Effect of ITO serving as a barrier layer for Cu electrodes on performance of a-IGZO TFT S Hu, K Lu, H Ning, Z Fang, X Liu, W Xie, R Yao, J Zou, M Xu, J Peng IEEE Electron Device Letters 39 (4), 504-507, 2018 | 37 | 2018 |
High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2 active layer X Liu, H Ning, J Chen, W Cai, S Hu, R Tao, Y Zeng, Z Zheng, R Yao, M Xu, ... Applied Physics Letters 108 (11), 2016 | 36 | 2016 |
Direct inkjet printing of silver source/drain electrodes on an amorphous InGaZnO layer for thin-film transistors H Ning, J Chen, Z Fang, R Tao, W Cai, R Yao, S Hu, Z Zhu, Y Zhou, ... Materials 10 (1), 51, 2017 | 34 | 2017 |