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Hansol Jun
Hansol Jun
Ph.D student at Hanyang university
Verified email at hanyang.ac.kr
Title
Cited by
Cited by
Year
Double MgO-based perpendicular magnetic tunnel junction for artificial neuron
DW Kim, WS Yi, JY Choi, K Ashiba, JU Baek, HS Jun, JJ Kim, JG Park
Frontiers in Neuroscience 14, 309, 2020
242020
A two-terminal perpendicular spin-transfer torque based artificial neuron
K Kondo, JY Choi, JU Baek, HS Jun, S Jung, TH Shim, JG Park
Journal of Physics D: Applied Physics 51 (50), 504002, 2018
162018
Double pinned perpendicular-magnetic-tunnel-junction spin-valve providing multi-level resistance states
JY Choi, H Jun, K Ashiba, JU Baek, TH Shim, JG Park
Scientific reports 9 (1), 11932, 2019
142019
Multi-bit magnetic memory device
JG Park, JY Choi, HS Jun, DG Lee, KEI Kondo, JU Baek
US Patent 11,133,458, 2021
42021
Enhanced Thermal Stability in Magnetic Random-Access Memory Cells With Free Layer Composed of Multilayer Co/Pt Coupled to Co2Fe6B2 With Interfacial …
JU Baek, SH Jung, HS Jun, K Ashiba, JY Choi, JG Park
IEEE Magnetics Letters 10, 1-5, 2019
32019
Multi-Level Synaptic Device Having Perpendicular Magnetic-Tunnel-Junction Spin-Valve Sensor Via Skyrmion Generated By Nano-Scale Current Emitter
Y Choi, HS Jun, SH Lee, YS Shin, JP Hong, TH Shim, J Park
Electrochemical Society Meeting Abstracts 245, 1512-1512, 2024
2024
Hardware Implementation of a Fully Functional Stochastic p‐STT Neuron for Probabilistic Computing
HS Jun, DS Woo, SH Lee, Y Choi, Y Shin, TH Shim, JJ Kim, JG Park
Advanced Electronic Materials, 2300821, 2024
2024
[Co/NM/Pt]n-based seedless synthetic anti-ferromagnetic layer design for preventing MgO crystallinity degradation from Pt diffusion
HS Jun, YH Choi, SH Lee, YS Shin, DH Park, JG Park
Journal of the Korean Physical Society 84 (3), 218-223, 2024
2024
Skyrmion Based Synaptic Device Having Perpendicular Magnetic-Tunnel-Junction Spin-Valve Sensor
Y Choi, HS Jun, HJ Kwon, SH Lee, YS Shin, TH Shim, J Park
Electrochemical Society Meeting Abstracts 244, 1529-1529, 2023
2023
Memory device based on multi-bit perpendicular magnetic tunnel junction
JG Park, JU Baek, K Ashiba, JY Choi, MR Park, HG Lee, HS Jun, SH Jung
US Patent 11,296,276, 2022
2022
Perpendicular-spin-transfer-torque magnetic-tunnel-junction neuron for spiking neural networks depending on the nanoscale grain size of the MgO tunnelling barrier
JU Baek, JY Choi, DW Kim, JC Kim, HS Jun, DS Woo, WS Yi, YH Choi, ...
Materials Advances 3 (3), 1587-1593, 2022
2022
Two Terminal Perpendicular Spin Transfer Torque Magnetic Random Access Memory Based Stochastic Nature Spin Neuron Device for Spiking Neural Network
HS Jun, Y Choi, J Kim, JY Choi, JU Baek, TH Shim, JG Park
Electrochemical Society Meeting Abstracts 240, 913-913, 2021
2021
Dependency of Anisotropy Field of Cofeb Layer on the Thickness of W Insert Layer for Manipulating Size of Skyrmions
J Choi, J Kim, Y Choi, H Jun, JU Baek, JG Park
Electrochemical Society Meeting Abstracts 240, 616-616, 2021
2021
MgO-Tunneling-Barrier Crystallinity Influence on Resistance Sensing Margin for Spiking Neuron Having Perpendicular-Spin-Transfer-Torque Integrate Characteristic
JU Baek, J Kim, H Lee, M Park, H Jun, JY Choi, TH Shim, J Park
Electrochemical Society Meeting Abstracts prime2020, 2041-2041, 2020
2020
Perpendicular Spin-Torque-Transfer Mechanism of Neuron: Integrate Vs. Stochastic Nature
H Jun, J Kim, H Lee, M Park, JY Choi, JU Baek, TH Shim, J Park
Electrochemical Society Meeting Abstracts prime2020, 2042-2042, 2020
2020
Integrate Nature of Perpendicular Spin-Orbit-Torque Neuron Depending on Crystal Structure of Tungsten
J Choi, H Jun, M Park, H Lee, J Kim, JU Baek, J Park
Electrochemical Society Meeting Abstracts prime2020, 2043-2043, 2020
2020
Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness
HS Jun, JY Choi, K Ashiba, SH Jung, M Park, JU Baek, TH Shim, JG Park
AIP Advances 10 (6), 2020
2020
Dependency of Multi-Level-Cell Behavior on Thickness of Top MgO Tunneling Barrier in Double Pinned Structure Perpendicular Spin-Torque-Transfer Magnetic Random Access Memory
HS Jun, M Park, S Jung, JY Choi, K Ashiba, JU Baek, TH Shim, JG Park
Electrochemical Society Meeting Abstracts 236, 877-877, 2019
2019
Perpendicular Spin-Transfer-Torque Magnetic Tunnel Junction Multi-Level Cell with Dual Free Layers and MgO Tunnel Barriers
JU Baek, HS Jun, JY Choi, K Kondo, JG Park
Electrochemical Society Meeting Abstracts 235, 1170-1170, 2019
2019
Enhanced Thermal Stability in Magnetic Random-Access Memory Cells With Free Layer Composed of Multilayer Co/Pt Coupled to Co2Fe6B2 With Interfacial Perpendicular Magnetic …
JU Beek, SH Jung, HS Jun, K Ashiba, JY Choi, JEA Park
IEEE MAGNETICS LETTERS 10, 2019
2019
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