Articles with public access mandates - Xiang (Shaun) LiLearn more
Not available anywhere: 6
Room-temperature creation and spin–orbit torque manipulation of skyrmions in thin films with engineered asymmetry
G Yu, P Upadhyaya, X Li, W Li, SK Kim, Y Fan, KL Wong, Y Tserkovnyak, ...
Nano letters 16 (3), 1981-1988, 2016
Mandates: US National Science Foundation, US Department of Energy
Field-free switching of perpendicular magnetization through voltage-gated spin-orbit torque
SZ Peng, JQ Lu, WX Li, LZ Wang, H Zhang, X Li, KL Wang, WS Zhao
2019 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2019
Mandates: National Natural Science Foundation of China
Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale
Y Zhang, Z Zhang, L Wang, J Nan, Z Zheng, X Li, K Wong, Y Wang, ...
Applied Physics Letters 111 (5), 2017
Mandates: National Natural Science Foundation of China
Voltage-controlled magnetic tunnel junctions with synthetic ferromagnet free layer sandwiched by asymmetric double MgO barriers
C Grezes, X Li, KL Wong, F Ebrahimi, PK Amiri, KL Wang
Journal of Physics D: Applied Physics 53 (1), 014006, 2019
Mandates: US National Science Foundation
High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures
LZ Wang, X Li, T Sasaki, K Wong, GQ Yu, SZ Peng, C Zhao, T Ohkubo, ...
Science China Physics, Mechanics & Astronomy 63, 1-6, 2020
Mandates: US National Science Foundation
Tunable spin–orbit torque efficiency in in-plane and perpendicular magnetized [Pt/Co] n multilayer
F Xue, SJ Lin, M DC, C Bi, X Li, W Tsai, SX Wang
Applied Physics Letters 118 (4), 2021
Mandates: US National Science Foundation
Available somewhere: 27
Room-temperature skyrmion shift device for memory application
G Yu, P Upadhyaya, Q Shao, H Wu, G Yin, X Li, C He, W Jiang, X Han, ...
Nano letters 17 (1), 261-268, 2017
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Interfacial Dzyaloshinskii-Moriya Interaction: Effect of Band Filling and Correlation with Spin Mixing Conductance
X Ma, G Yu, C Tang, X Li, C He, J Shi, KL Wang, X Li
Physical review letters 120 (15), 157204, 2018
Mandates: US Department of Energy
Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB| MgO interface
X Li, K Fitzell, D Wu, CT Karaba, A Buditama, G Yu, KL Wong, N Altieri, ...
Applied Physics Letters 110 (5), 2017
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Interfacial control of Dzyaloshinskii-Moriya interaction in heavy metal/ferromagnetic metal thin film heterostructures
X Ma, G Yu, X Li, T Wang, D Wu, KS Olsson, Z Chu, K An, JQ Xiao, ...
Physical Review B 94 (18), 180408, 2016
Mandates: US National Science Foundation, US Department of Energy
Dzyaloshinskii-Moriya interaction across an antiferromagnet-ferromagnet interface
X Ma, G Yu, SA Razavi, SS Sasaki, X Li, K Hao, SH Tolbert, KL Wang, X Li
Physical review letters 119 (2), 027202, 2017
Mandates: US Department of Energy
Spin-orbit torques in perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO multilayer
D Wu, G Yu, CT Chen, SA Razavi, Q Shao, X Li, B Zhao, KL Wong, C He, ...
Applied Physics Letters 109 (22), 2016
Mandates: US National Science Foundation, US Department of Energy, National Natural …
Spin-orbit torque from a ferromagnetic metal
H Wu, SA Razavi, Q Shao, X Li, KL Wong, Y Liu, G Yin, KL Wang
Physical Review B 99 (18), 184403, 2019
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Write error rate and read disturbance in electric-field-controlled magnetic random-access memory
C Grezes, H Lee, A Lee, S Wang, F Ebrahimi, X Li, K Wong, JA Katine, ...
IEEE Magnetics Letters 8, 1-5, 2016
Mandates: US National Science Foundation
Spin-torque ferromagnetic resonance measurements utilizing spin Hall magnetoresistance in W/Co40Fe40B20/MgO structures
C He, A Navabi, Q Shao, G Yu, D Wu, W Zhu, C Zheng, X Li, QL He, ...
Applied Physics Letters 109 (20), 2016
Mandates: US National Science Foundation, US Department of Energy
Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier
D Chien, X Li, K Wong, MA Zurbuchen, S Robbennolt, G Yu, S Tolbert, ...
Applied Physics Letters 108 (11), 2016
Mandates: US National Science Foundation
Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3
M Dc, DF Shao, VDH Hou, A Vailionis, P Quarterman, A Habiboglu, ...
Nature Materials 22 (5), 591-598, 2023
Mandates: US National Science Foundation, US Department of Defense, Japan Science and …
Voltage-controlled magnetic tunnel junctions for processing-in-memory implementation
L Wang, W Kang, F Ebrahimi, X Li, Y Huang, C Zhao, KL Wang, W Zhao
IEEE Electron Device Letters 39 (3), 440-443, 2018
Mandates: National Natural Science Foundation of China
Perpendicular magnetic tunnel junction with W seed and capping layers
H Almasi, CL Sun, X Li, T Newhouse-Illige, C Bi, KC Price, S Nahar, ...
Journal of Applied Physics 121 (15), 2017
Mandates: US National Science Foundation, US Department of Defense
Colossal electric field control of magnetic anisotropy at ferromagnetic interfaces induced by iridium overlayer
S Kwon, PV Ong, Q Sun, F Mahfouzi, X Li, KL Wang, Y Kato, H Yoda, ...
Physical Review B 99 (6), 064434, 2019
Mandates: US National Science Foundation
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