Michael A Reshchikov

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Hadis MorkoçVirginia Commonwealth UniversityVerified email at vcu.edu
Vitaliy AvrutinVirginia Commonwealth UniversityVerified email at vcu.edu
Umit OzgurVirginia Commonwealth UniversityVerified email at vcu.edu
Ali TekeBalıkesir Üniversitesinde Fizik ProfesörüVerified email at balikesir.edu.tr
Denis DemchenkoAssistant Professor of Physics, Virginia Commonwealth UniversityVerified email at vcu.edu
Alison A. BaskiCal Poly PomonaVerified email at cpp.edu
Paolo VISCONTIDepartment of Innovation Engineering, University of SalentoVerified email at unisalento.it
Seydi DoğanVerified email at balikesir.edu.tr
Jacek JasinskiConn Center for Renewable Energy Research, University of LouisvilleVerified email at louisville.edu
F. Shadi Shahedipour-SandvikSUNY College of Nanoscale Science and EngineeringVerified email at sunypoly.edu
Mykhailo VorobiovCollege of Willaim & MaryVerified email at wm.edu
Oleksandr AndrieievPhD student in Physics, VCUVerified email at vcu.edu
Bruce WesselsNorthwestern UniversityVerified email at northwestern.edu
Andrey BakinProf. Dr., Technische Universität BraunschweigVerified email at tu-bs.de
Andreas WaagTechnische Universität BraunschweigVerified email at tu-braunschweig.de
Yong-Tae MoonLG ElectronicsVerified email at lge.com
Gyuchul YiSeoul National University OR POSTECHVerified email at snu.ac.kr
Vincent MeyersSandia National LaboratoriesVerified email at sandia.gov
M Zafar IqbalComsats Institute of Information Technology, Islamabad, PakistanVerified email at comsats.edu.pk
Emma RoccoSUNY Polytechnic Institute CNSEVerified email at sunypoly.edu

Michael A Reshchikov

Professor of Physics, Virginia Commonwealth University

Verified email at vcu.edu - Homepage

Semiconductor physics Photoluminescence GaN defects


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A comprehensive review of ZnO materials and devices Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, ... Journal of applied physics 98 (4), 2005	13557*	2005
Luminescence properties of defects in GaN MA Reshchikov, H Morkoç Journal of applied physics 97 (6), 2005	2209	2005
Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities MA Reshchikov, GC Yi, BW Wessels Physical Review B 59 (20), 13176, 1999	293	1999
Yellow luminescence of gallium nitride generated by carbon defect complexes DO Demchenko, IC Diallo, MA Reshchikov Physical review letters 110 (8), 087404, 2013	253	2013
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films MA Reshchikov, RY Korotkov Physical Review B 64 (11), 115205, 2001	232	2001
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching P Visconti, KM Jones, MA Reshchikov, R Cingolani, H Morkoç, RJ Molnar Applied Physics Letters 77 (22), 3532-3534, 2000	217	2000
Luminescence properties of defects in ZnO MA Reshchikov, H Morkoc, B Nemeth, J Nause, J Xie, B Hertog, ... Physica B: Condensed Matter 401, 358-361, 2007	214	2007
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN MA Reshchikov, DO Demchenko, A Usikov, H Helava, Y Makarov Physical Review B 90 (23), 235203, 2014	209	2014
Energy band bowing parameter in AlxGa1− xN alloys F Yun, MA Reshchikov, L He, T King, H Morkoç, SW Novak, L Wei Journal of applied physics 92 (8), 4837-4839, 2002	206	2002
Green luminescence in Mg-doped GaN MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ... Physical Review B 90 (3), 035207, 2014	154	2014
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers MA Reshchikov, F Shahedipour, RY Korotkov, BW Wessels, MP Ulmer Journal of Applied Physics 87 (7), 3351-3354, 2000	144	2000
Surface photovoltage in undoped n-type GaN MA Reshchikov, M Foussekis, AA Baski Journal of Applied Physics 107 (11), 2010	128	2010
Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN MA Reshchikov, AA Kvasov, MF Bishop, T McMullen, A Usikov, ... Physical Review B—Condensed Matter and Materials Physics 84 (7), 075212, 2011	115	2011
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy D Huang, P Visconti, KM Jones, MA Reshchikov, F Yun, AA Baski, T King, ... Applied Physics Letters 78 (26), 4145-4147, 2001	115	2001
Measurement and analysis of photoluminescence in GaN MA Reshchikov Journal of applied physics 129 (12), 2021	112	2021
Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors MA Reshchikov Journal of Applied Physics 115 (1), 2014	111	2014
Yellow and green luminescence in a freestanding GaN template MA Reshchikov, H Morkoç, SS Park, KY Lee Applied Physics Letters 78 (20), 3041-3043, 2001	102	2001
Two charge states of the acceptor in GaN: Evidence from photoluminescence MA Reshchikov, M Vorobiov, DO Demchenko, Ü Özgür, H Morkoç, ... Physical Review B 98 (12), 125207, 2018	101	2018
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study MA Reshchikov, H Morkoç, SS Park, KY Lee Applied Physics Letters 81 (26), 4970-4972, 2002	100	2002
GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces X Gu, MA Reshchikov, A Teke, D Johnstone, H Morkoc, B Nemeth, ... Applied physics letters 84 (13), 2268-2270, 2004	98	2004

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