Design and performance of wideband DRFM for radar test and evaluation K Olivier, JE Cilliers, M Du Plessis Electronics Letters 47 (14), 824-825, 2011 | 114 | 2011 |
An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface LW Snyman, M Du Plessis, E Seevinck, H Aharoni IEEE Electron Device Letters 20 (12), 614-617, 1999 | 99 | 1999 |
Properties of porous silicon nano-explosive devices M du Plessis Sensors and Actuators A: Physical 135 (2), 666-674, 2007 | 95 | 2007 |
Tuning stubs for microstrip-patch antennas M Du Plessis, J Cloete IEEE Antennas and Propagation magazine 36 (6), 52-56, 1994 | 81 | 1994 |
Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems M Du Plessis, H Aharoni, LW Snyman IEEE Journal of Selected Topics in Quantum Electronics 8 (6), 1412-1419, 2002 | 67 | 2002 |
Increased efficiency of silicon light-emitting diodes in a standard 1.2-um silicon complementary metal oxide semiconductor technology LW Snyman, H Aharoni, M Du Plessis, RBJ Gouws Optical Engineering 37 (7), 2133-2141, 1998 | 62 | 1998 |
A Decade of Porous Silicon as Nano‐Explosive Material M Plessis Propellants, Explosives, Pyrotechnics 39 (3), 348-364, 2014 | 58 | 2014 |
Planar light-emitting electro-optical interfaces in standard silicon complementary metal oxide semiconductor integrated circuitry LW Snyman, H Aharoni, M Du Plessis, JFK Marais, D Van Niekerk, ... Optical Engineering 41 (12), 3230-3240, 2002 | 58 | 2002 |
A silicon transconductance light emitting device (TRANSLED) M Du Plessis, H Aharoni, LW Snyman Sensors and Actuators A: Physical 80 (3), 242-248, 2000 | 52 | 2000 |
Nanoporous silicon explosive devices M du Plessis Materials Science and Engineering: B 147 (2-3), 226-229, 2008 | 49 | 2008 |
Relationship between specific surface area and pore dimension of high porosity nanoporous silicon–model and experiment M Du Plessis physica status solidi (a) 204 (7), 2319-2328, 2007 | 46 | 2007 |
A strategic forestry site classification for the summer rainfall region of southern Africa based on climate, geology and soils. CW Smith, RN Pallett, RP Kunz, RAW Gardner, M Plessis | 46 | 2005 |
Optical sources, integrated optical detectors, and optical waveguides in standard silicon CMOS integrated circuitry LW Snyman, H Aharoni, A Biber, A Bogalecki, L Canning, M du Plessis, ... Silicon-based Optoelectronics II 3953, 20-36, 2000 | 42 | 2000 |
Active-bootstrapped gain-enhancement technique for low-voltage circuits E Seevinck, M Du Plessis, TH Joubert, AE Theron IEEE Transactions on Circuits and Systems II: Analog and Digital Signal …, 1998 | 40 | 1998 |
Injection-avalanche-based n+ pn silicon complementary metal–oxide–semiconductor light-emitting device (450–750 nm) with 2-order-of-magnitude increase in light emission intensity LW Snyman, M Du Plessis, H Aharoni Japanese journal of Applied physics 46 (4S), 2474, 2007 | 39 | 2007 |
Photonic Transitions (1.4 eV–2.8 eV) in Silicon pnpInjection-Avalanche CMOS LEDs as Function of Depletion Layer Profiling and Defect Engineering LW Snyman, M Du Plessis, E Bellotti IEEE Journal of Quantum Electronics 46 (6), 906-919, 2010 | 38 | 2010 |
Two-and multi-terminal CMOS/BiCMOS Si LED’s M Du Plessis, H Aharoni, LW Snyman Optical Materials 27 (5), 1059-1063, 2005 | 37 | 2005 |
Low-operating-voltage integrated silicon light-emitting devices H Aharoni, M Du Plessis IEEE journal of Quantum Electronics 40 (5), 557-563, 2004 | 37 | 2004 |
Spatial and intensity modulation of light emission from silicon LED matrix M Du Plessis, H Aharoni, LW Snyman COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic …, 2000 | 37 | 2000 |
Injection-avalanche based n+ pn Si CMOS LED’s (450nm. 750nm) with two order increase in light emission intensity-Applications for next generation silicon-based optoelectronics LW Snyman, M Du Plessis, H Aharoni Jpn. J. Appl. Physics 46 (4B), 2474-2480, 2007 | 34 | 2007 |