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JPR David
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Cited by
Year
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
PW Fry, IE Itskevich, DJ Mowbray, MS Skolnick, JJ Finley, JA Barker, ...
Physical review letters 84 (4), 733, 2000
7072000
Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ...
Applied Physics Letters 85 (5), 704-706, 2004
3372004
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
K McGroddy, A David, E Matioli, M Iza, S Nakamura, S DenBaars, ...
Applied physics letters 93 (10), 2008
279*2008
Design and performance of an InGaAs-InP single-photon avalanche diode detector
S Pellegrini, RE Warburton, LJJ Tan, JS Ng, AB Krysa, K Groom, ...
IEEE journal of quantum electronics 42 (4), 397-403, 2006
1792006
An enhanced color shift keying modulation scheme for high-speed wireless visible light communications
R Singh, T O’Farrell, JPR David
Journal of Lightwave Technology 32 (14), 2582-2592, 2014
1782014
Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes
KF Li, DS Ong, JPR David, GJ Rees, RC Tozer, PN Robson, R Grey
IEEE Transactions on Electron Devices 45 (10), 2102-2107, 1998
1611998
Room-temperature 1.6 μm light emission from InAs∕ GaAs quantum dots with a thin GaAsSb cap layer
HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, F Suarez, ...
Journal of applied physics 99 (4), 2006
1282006
Temperature dependence of impact ionization in submicrometer silicon devices
DJ Massey, JPR David, GJ Rees
IEEE Transactions on Electron Devices 53 (9), 2328-2334, 2006
1222006
Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P
MC DeLong, DJ Mowbray, RA Hogg, MS Skolnick, M Hopkinson, ...
Journal of applied physics 73 (10), 5163-5172, 1993
1161993
A simple model to determine multiplication and noise in avalanche photodiodes
DS Ong, KF Li, GJ Rees, JPR David, PN Robson
Journal of applied physics 83 (6), 3426-3428, 1998
1111998
Impact ionization coefficients in 4H-SiC
WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ...
IEEE Transactions on electron devices 55 (8), 1984-1990, 2008
1072008
Influences of the spacer layer growth temperature on multilayer InAs∕ GaAs quantum dot structures
HY Liu, IR Sellers, M Gutierrez, KM Groom, WM Soong, M Hopkinson, ...
Journal of applied physics 96 (4), 1988-1992, 2004
1072004
Excess avalanche noise in In0. 52Al0. 48As
YL Goh, ARJ MARSHALL, DJ Massey, JS Ng, CH Tan, M Hopkinson
IEEE journal of quantum electronics 43 (5-6), 503-507, 2007
1042007
A Monte Carlo investigation of multiplication noise in thin p/sup+/-in/sup+/GaAs avalanche photodiodes
DS Ong, KF Li, GJ Rees, GM Dunn, JPR David, PN Robson
IEEE Transactions on Electron Devices 45 (8), 1804-1810, 1998
1021998
Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ...
physica status solidi (b) 251 (6), 1276-1281, 2014
1012014
Temperature dependence of avalanche breakdown in InP and InAlAs
LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David
IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010
952010
Nonlocal effects in thin 4H-SiC UV avalanche photodiodes
BK Ng, JPR David, RC Tozer, GJ Rees, F Yan, JH Zhao, M Weiner
IEEE Transactions on Electron Devices 50 (8), 1724-1732, 2003
932003
Investigation of impact ionization in thin GaAs diodes
SA Plimmer, JPR David, DC Herbert, TW Lee, GJ Rees, PA Houston, ...
IEEE Transactions on Electron Devices 43 (7), 1066-1072, 1996
891996
Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111) B GaAs
AS Pabla, JL Sanchez‐Rojas, J Woodhead, R Grey, JPR David, GJ Rees, ...
Applied physics letters 63 (6), 752-754, 1993
881993
Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
ARJ Marshall, CH Tan, MJ Steer, JPR David
Applied Physics Letters 93 (11), 2008
862008
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