Electronic properties of bulk and monolayer TMDs: theoretical study within DFT framework (GVJ‐2e method) J Gusakova, X Wang, LL Shiau, A Krivosheeva, V Shaposhnikov, ... physica status solidi (a) 214 (12), 1700218, 2017 | 403 | 2017 |
Ab initio modeling of the structural, electronic, and optical properties of ABC semiconductors VL Shaposhnikov, AV Krivosheeva, VE Borisenko, JL Lazzari, ... Physical Review B—Condensed Matter and Materials Physics 85 (20), 205201, 2012 | 162 | 2012 |
Electronic properties of semiconducting silicides: fundamentals and recent predictions LI Ivanenko, VL Shaposhnikov, AB Filonov, AV Krivosheeva, ... Thin solid films 461 (1), 141-147, 2004 | 102 | 2004 |
Theoretical study of defect impact on two-dimensional MoS2 AV Krivosheeva, VL Shaposhnikov, VE Borisenko, JL Lazzari, ... Journal of Semiconductors 36 (12), 122002, 2015 | 57 | 2015 |
Structural, electronic and optical properties of II–IV–N2 compounds (II = Be, Zn; IV = Si, Ge) VL Shaposhnikov, AV Krivosheeva, F Arnaud D'Avitaya, JL Lazzari, ... physica status solidi (b) 245 (1), 142-148, 2008 | 48 | 2008 |
Reconstruction of quasi-one-dimensional systems: Charge- and spin-density waves versus bonding X Lopez-Lozano, A Krivosheeva, AA Stekolnikov, L Meza-Montes, ... Physical Review B—Condensed Matter and Materials Physics 73 (3), 035430, 2006 | 40 | 2006 |
Electronic and magnetic properties of Mn-doped BeSiAs2 and BeGeAs2 compounds AV Krivosheeva, VL Shaposhnikov, FA d’Avitaya, VE Borisenko, ... Journal of Physics: Condensed Matter 21 (4), 045507, 2009 | 36 | 2009 |
Electronic structure of stressed CrSi2 AV Krivosheeva, VL Shaposhnikov, VE Borisenko Materials Science and Engineering: B 101 (1-3), 309-312, 2003 | 29 | 2003 |
Prospects on Mn-doped ZnGeP2 for spintronics AV Krivosheeva, VL Shaposhnikov, VV Lyskouski, VE Borisenko, ... Microelectronics Reliability 46 (9-11), 1747-1749, 2006 | 21 | 2006 |
Band structure of Mg2Si and Mg2Ge semiconducting compounds with a strained crystal lattice AV Krivosheeva, AN Kholod, VL Shaposhnikov, AE Krivosheev, ... Semiconductors 36, 496-500, 2002 | 21 | 2002 |
Effect of stresses in electronic properties of chromium disilicide VL Shaposhnikov, AV Krivosheeva, AE Krivosheev, AB Filonov, ... Microelectronic Engineering 64 (1-4), 219-223, 2002 | 20 | 2002 |
Band gap modifications of two-dimensional defected MoS2 AV Krivosheeva, VL Shaposhnikov, VE Borisenko, JL Lazzari, ... International Journal of Nanotechnology 12 (8-9), 654-662, 2015 | 19 | 2015 |
Electronic properties of thin BaSi2 films with different orientations DB Migas, VO Bogorodz, AV Krivosheeva, VL Shaposhnikov, AB Filonov, ... Japanese Journal of Applied Physics 56 (5S1), 05DA03, 2017 | 17 | 2017 |
Structure, electronic and optical properties of tin sulfide VL Shaposhnikov, AV Krivosheeva, VE Borisenko, JL Lazzari ScienceJet 1 (16), 1-4, 2012 | 17* | 2012 |
Vibrational properties of the quasi-one-dimensional I n/S i (111)−(4× 1) system F Bechstedt, A Krivosheeva, J Furthmüller, AA Stekolnikov Physical Review B 68 (19), 193406, 2003 | 17 | 2003 |
Structural, electronic and optical properties of semiconducting rhenium silicide VL Shaposhnikov, AV Krivosheeva, LI Ivanenko, AB Filonov, ... Journal of Physics: Condensed Matter 16 (3), 303, 2004 | 16 | 2004 |
Energy band gap tuning in Te-doped WS2/WSe2 heterostructures A Krivosheeva, V Shaposhnikov, V Borisenko, JL Lazzari Journal of Materials Science 55 (23), 9695-9702, 2020 | 15 | 2020 |
Impact of defects on electronic properties of heterostructures constructed from monolayers of transition metal dichalcogenides VL Shaposhnikov, AV Krivosheeva, VE Borisenko physica status solidi (b) 256 (5), 1800355, 2019 | 14 | 2019 |
Structural, electronic and optical properties of a new binary phase–ruthenium disilicide VL Shaposhnikov, AB Filonov, AV Krivosheeva, LI Ivanenko, ... physica status solidi (b) 242 (14), 2864-2871, 2005 | 10 | 2005 |
Magnetic properties of AII–BIV–C2V chalcopyrite semiconductors doped with 3d‐elements AV Krivosheeva, VL Shaposhnikov, VE Borisenko, JL Lazzari physica status solidi (b) 251 (5), 1007-1019, 2014 | 8 | 2014 |