Articles with public access mandates - Wenjing JieLearn more
Not available anywhere: 19
Memristor based on inorganic and organic two-dimensional materials: mechanisms, performance, and synaptic applications
K Liao, P Lei, M Tu, S Luo, T Jiang, W Jie, J Hao
ACS Applied Materials & Interfaces 13 (28), 32606-32623, 2021
Mandates: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications
Y Yang, H Du, Q Xue, X Wei, Z Yang, C Xu, D Lin, W Jie, J Hao
Nano Energy 57, 566-573, 2019
Mandates: National Natural Science Foundation of China, Research Grants Council, Hong Kong
High‐performance memristor based on 2d layered bioi nanosheet for low‐power artificial optoelectronic synapses
P Lei, H Duan, L Qin, X Wei, R Tao, Z Wang, F Guo, M Song, W Jie, J Hao
Advanced Functional Materials 32 (25), 2201276, 2022
Mandates: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Low-power memristor based on two-dimensional materials
H Duan, S Cheng, L Qin, X Zhang, B Xie, Y Zhang, W Jie
The Journal of Physical Chemistry Letters 13 (31), 7130-7138, 2022
Mandates: National Natural Science Foundation of China
Hybrid heterostructures and devices based on two-dimensional layers and wide bandgap materials
Z Wu, W Jie, Z Yang, J Hao
Materials Today Nano 12, 100092, 2020
Mandates: National Natural Science Foundation of China, Research Grants Council, Hong Kong
GaSe/MoS2 Heterostructure with Ohmic‐Contact Electrodes for Fast, Broadband Photoresponse, and Self‐Driven Photodetectors
Z He, J Guo, S Li, Z Lei, L Lin, Y Ke, W Jie, T Gong, Y Lin, T Cheng, ...
Advanced Materials Interfaces 7 (9), 1901848, 2020
Mandates: National Natural Science Foundation of China
Reversible transformation between bipolar memory switching and bidirectional threshold switching in 2D layered K-birnessite nanosheets
M Tu, H Lu, S Luo, H Peng, S Li, Y Ke, S Yuan, W Huang, W Jie, J Hao
ACS applied materials & interfaces 12 (21), 24133-24140, 2020
Mandates: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Black phosphorus/ferroelectric P (VDF-TrFE) field-effect transistors with high mobility for energy-efficient artificial synapse in high-accuracy neuromorphic computing
Z Dang, F Guo, H Duan, Q Zhao, Y Fu, W Jie, K Jin, J Hao
Nano letters 23 (14), 6752-6759, 2023
Mandates: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Phase coexistence induced strong piezoelectricity in K 0.5 Na 0.5 NbO 3-based lead-free ceramics
Y Yang, H Wang, Y Li, Q Zheng, J Liao, W Jie, D Lin
Dalton Transactions 48 (28), 10676-10682, 2019
Mandates: National Natural Science Foundation of China
Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors
H Chen, Y Kang, D Pu, M Tian, N Wan, Y Xu, B Yu, W Jie, Y Zhao
Nanoscale 15 (9), 4309-4316, 2023
Mandates: National Natural Science Foundation of China
Combustion synthesis of high-performance high-entropy dielectric ceramics for energy storage applications
C Zuo, S Yang, Z Cao, W Jie, X Wei
Ceramics International 49 (15), 25486-25494, 2023
Mandates: National Natural Science Foundation of China
Controllable digital and analog resistive switching behavior of 2D layered WSe 2 nanosheets for neuromorphic computing
S Cheng, L Zhong, J Yin, H Duan, Q Xie, W Luo, W Jie
Nanoscale 15 (10), 4801-4808, 2023
Mandates: National Natural Science Foundation of China
Co-existence of bipolar nonvolatile and volatile resistive switching based on WO3 nanowire for applications in neuromorphic computing and selective memory
L Qin, S Cheng, B Xie, X Wei, W Jie
Applied Physics Letters 121 (9), 2022
Mandates: National Natural Science Foundation of China
Observation of nonvolatile resistive switching behaviors in 2D layered InSe nanosheets through controllable oxidation
Y Tang, P Lei, K Liao, T Jiang, S Chen, Q Xie, W Luo, Y Zhao, W Jie
Applied Physics Letters 119 (13), 2021
Mandates: National Natural Science Foundation of China
Memristors based on 2D MoSe 2 nanosheets as artificial synapses and nociceptors for neuromorphic computing
H Duan, D Wang, J Gou, F Guo, W Jie, J Hao
Nanoscale 15 (23), 10089-10096, 2023
Mandates: National Natural Science Foundation of China, Research Grants Council, Hong Kong
An Artificial Electrical-Chemical Mixed Synapse Based on Ion-Gated MoS2 Nanosheets for Real-Time Facilitation Index Tuning
Y Ke, L Mao, W Jie, T Gong, W Huang, X Zhang
ACS Applied Materials & Interfaces 13 (13), 15755-15760, 2021
Mandates: National Natural Science Foundation of China
Chemical-vapor-deposited 2D VSe 2 nanosheet with threshold switching behaviors for Boolean logic calculations and leaky integrate-and-fire functions
L Zhong, W Xie, J Yin, W Jie
Journal of Materials Chemistry C 11 (15), 5032-5038, 2023
Mandates: National Natural Science Foundation of China
Phase transition induced threshold resistive switching in two-dimensional VTe2 nanosheets for Boolean logic operations
L Zhong, M Li, S Yan, W Jie
Applied Physics Letters 123 (7), 2023
Mandates: National Natural Science Foundation of China
Ferroelectric Modulation of ReS
Z Dang, F Guo, Y Zhao, K Jin, W Jie, J Hao
Mandates: Research Grants Council, Hong Kong
Available somewhere: 23
Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS2 Sheet
YY Hui, X Liu, W Jie, NY Chan, J Hao, YT Hsu, LJ Li, W Guo, SP Lau
ACS nano 7 (8), 7126-7131, 2013
Mandates: Research Grants Council, Hong Kong
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