Contacting graphene JA Robinson, M LaBella, M Zhu, M Hollander, R Kasarda, Z Hughes, ... Applied Physics Letters 98, 053103, 2011 | 470 | 2011 |
Tungsten Ditelluride: a layered semimetal CH Lee, EC Silva, L Calderin, MAT Nguyen, MJ Hollander, B Bersch, ... Scientific reports 5 (1), 10013, 2015 | 293 | 2015 |
Epitaxial graphene transistors: enhancing performance via hydrogen intercalation JA Robinson, M Hollander, M LaBella III, KA Trumbull, R Cavalero, ... Nano letters 11 (9), 3875-3880, 2011 | 199 | 2011 |
Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition MA Fanton, JA Robinson, C Puls, Y Liu, MJ Hollander, BE Weiland, ... Acs Nano 5 (10), 8062-8069, 2011 | 195 | 2011 |
Electrically Driven Reversible Insulator–Metal Phase Transition in 1T-TaS2 MJ Hollander, Y Liu, WJ Lu, LJ Li, YP Sun, JA Robinson, S Datta Nano letters 15 (3), 1861-1866, 2015 | 191 | 2015 |
Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices MS Bresnehan, MJ Hollander, M Wetherington, M LaBella, KA Trumbull, ... ACS nano 6 (6), 5234-5241, 2012 | 157 | 2012 |
Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene MJ Hollander, M LaBella, ZR Hughes, M Zhu, KA Trumbull, R Cavalero, ... Nano letters 11 (9), 3601-3607, 2011 | 131 | 2011 |
Prospects of direct growth boron nitride films as substrates for graphene electronics MS Bresnehan, MJ Hollander, M Wetherington, K Wang, T Miyagi, ... Journal of Materials Research 29 (3), 459-471, 2014 | 84 | 2014 |
Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for … R Pandey, H Madan, H Liu, V Chobpattana, M Barth, B Rajamohanan, ... 2015 Symposium on VLSI Technology (VLSI Technology), T206-T207, 2015 | 56 | 2015 |
Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices Z Wang, CP Puls, NE Staley, Y Zhang, A Todd, J Xu, CA Howsare, ... Physica E: Low-dimensional Systems and Nanostructures 44 (2), 521-524, 2011 | 47 | 2011 |
Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC (0001) JA Robinson, KA Trumbull, M LaBella, R Cavalero, MJ Hollander, M Zhu, ... Applied Physics Letters 98 (22), 2011 | 33 | 2011 |
D., and Chicken, E.: Nonparametric Statistical Methods M Hollander, A Wolfe John Wiley & Sons, Inc., Hoboken, NJ, USA, third edn., doi 10, 9781119196037, 2013 | 29 | 2013 |
Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide H Madan, MJ Hollander, M LaBella, R Cavalero, D Snyder, JA Robinson, ... 2012 International Electron Devices Meeting, 4.3. 1-4.3. 4, 2012 | 29 | 2012 |
Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors B Rajamohanan, D Mohata, Y Zhu, M Hudait, Z Jiang, M Hollander, ... Journal of Applied Physics 115 (4), 2014 | 26 | 2014 |
Heterogeneous integration of hexagonal boron nitride on bilayer quasi‐free‐standing epitaxial graphene and its impact on electrical transport properties MJ Hollander, A Agrawal, MS Bresnehan, M LaBella, KA Trumbull, ... physica status solidi (a) 210 (6), 1062-1070, 2013 | 21 | 2013 |
Process–structure–property relations of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) DA Grave, ZR Hughes, JA Robinson, TP Medill, MJ Hollander, AL Stump, ... Surface and Coatings Technology 206 (13), 3094-3103, 2012 | 19 | 2012 |
A distribution free test for ordered alternatives (Jonckheere, Terpstra) In: Nonparametric Statistical Methods M Hollander, DA Wolfe New York, John Wiley and Sons, 1999 | 18 | 1999 |
Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics H Madan, MJ Hollander, JA Robinson, S Datta 70th Device Research Conference, 181-182, 2012 | 12 | 2012 |
Short-channel graphene nanoribbon transistors with enhanced symmetry between p-and n-branches MJ Hollander, H Madan, N Shukla, DA Snyder, JA Robinson, S Datta Applied Physics Express 7 (5), 055103, 2014 | 10 | 2014 |
Analysis and benchmarking of graphene based RF low noise amplifiers H Madan, MJ Hollander, JA Robinson, S Datta 71st Device Research Conference, 41-42, 2013 | 10 | 2013 |