Articles with public access mandates - Ron SchrimpfLearn more
Not available anywhere: 62
Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
Mandates: US Department of Energy
Introduction of interfacial charges to black phosphorus for a family of planar devices
G Wang, L Bao, T Pei, R Ma, YY Zhang, L Sun, G Zhang, H Yang, J Li, ...
Nano letters 16 (11), 6870-6878, 2016
Mandates: US National Science Foundation, US Department of Energy, Chinese Academy of …
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs
R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
Mandates: US National Science Foundation, US Department of Defense
Radiation effects in algan/gan hemts
DM Fleetwood, EX Zhang, RD Schrimpf, ST Pantelides
IEEE Transactions on Nuclear Science 69 (5), 1105-1119, 2022
Mandates: US Department of Defense
Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2Gate Dielectrics
CD Liang, R Ma, Y Su, A O’Hara, EX Zhang, ML Alles, P Wang, SE Zhao, ...
IEEE Transactions on Nuclear Science 65 (6), 1227-1238, 2018
Mandates: US National Science Foundation, US Department of Defense
Effects of breakdown voltage on single-event burnout tolerance of high-voltage SiC power MOSFETs
DR Ball, KF Galloway, RA Johnson, ML Alles, AL Sternberg, AF Witulski, ...
IEEE Transactions on Nuclear Science 68 (7), 1430-1435, 2021
Mandates: US National Aeronautics and Space Administration
Displacement damage in bipolar junction transistors: Beyond Messenger-Spratt
HJ Barnaby, RD Schrimpf, KF Galloway, X Li, J Yang, C Liu
IEEE Transactions on Nuclear Science 64 (1), 149-155, 2016
Mandates: US National Aeronautics and Space Administration, National Natural Science …
Dose-rate dependence of the total-ionizing-dose response of GaN-based HEMTs
R Jiang, EX Zhang, MW McCurdy, P Wang, H Gong, D Yan, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 66 (1), 170-176, 2018
Mandates: US Department of Defense
Comparison of total-ionizing-dose effects in bulk and SOI FinFETs at 90 and 295 K
TD Haeffner, RF Keller, R Jiang, BD Sierawski, MW McCurdy, EX Zhang, ...
IEEE Transactions on Nuclear Science 66 (6), 911-917, 2019
Mandates: US National Aeronautics and Space Administration
Predicting muon-induced SEU rates for a 28-nm SRAM using protons and heavy ions to calibrate the sensitive volume model
JM Trippe, RA Reed, RA Austin, BD Sierawski, LW Massengill, RA Weller, ...
IEEE Transactions on Nuclear Science 65 (2), 712-718, 2017
Mandates: US Department of Defense
Total-ionizing-dose response of highly scaled gate-all-around Si nanowire CMOS transistors
M Gorchichko, EX Zhang, P Wang, S Bonaldo, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 68 (5), 687-696, 2021
Mandates: US Department of Defense
Radiation-induced charge trapping and low-frequency noise of graphene transistors
P Wang, C Perini, A O’Hara, BR Tuttle, EX Zhang, H Gong, C Liang, ...
IEEE Transactions on Nuclear Science 65 (1), 156-163, 2017
Mandates: US Department of Defense
Total ionizing dose responses of 22-nm FDSOI and 14-nm bulk FinFET charge-trap transistors
RM Brewer, EX Zhang, M Gorchichko, PF Wang, J Cox, SL Moran, ...
IEEE Transactions on Nuclear Science 68 (5), 677-686, 2021
Mandates: US Department of Defense
Strong correlation between experiment and simulation for two-photon absorption induced carrier generation
JM Hales, NJH Roche, A Khachatrian, D Mcmorrow, S Buchner, J Warner, ...
IEEE Transactions on Nuclear Science 64 (5), 1133-1136, 2017
Mandates: US Department of Defense
Dependence of ideality factor in lateral PNP transistors on surface carrier concentration
X Li, J Yang, HJ Barnaby, KF Galloway, RD Schrimpf, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 64 (6), 1549-1553, 2017
Mandates: National Natural Science Foundation of China
Worst-case bias for high voltage, elevated-temperature stress of AlGaN/GaN HEMTs
PF Wang, X Li, EX Zhang, R Jiang, MW McCurdy, BS Poling, ER Heller, ...
IEEE Transactions on Device and Materials Reliability 20 (2), 420-428, 2020
Mandates: US Department of Defense
Proton-induced displacement damage and total-ionizing-dose effects on silicon-based MEMS resonators
H Gong, W Liao, EX Zhang, AL Sternberg, MW McCurdy, JL Davidson, ...
IEEE Transactions on Nuclear Science 65 (1), 34-38, 2017
Mandates: US Department of Defense
Polarization dependence of pulsed laser-induced SEEs in SOI FinFETs
LD Ryder, KL Ryder, AL Sternberg, JA Kozub, H Gong, EX Zhang, ...
IEEE Transactions on Nuclear Science 67 (1), 38-43, 2019
Mandates: US Department of Defense
Low-energy ion-induced single-event burnout in gallium oxide Schottky diodes
RM Cadena, DR Ball, EX Zhang, S Islam, A Senarath, MW McCurdy, ...
IEEE Transactions on Nuclear Science 70 (4), 363-369, 2023
Mandates: US Department of Defense
Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs
K Li, EX Zhang, M Gorchichko, PF Wang, M Reaz, SE Zhao, G Hiblot, ...
IEEE Transactions on Nuclear Science 68 (5), 740-747, 2021
Mandates: US Department of Defense
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