Accuracy of electron counting using a 7‐junction electron pump MW Keller, JM Martinis, NM Zimmerman, AH Steinbach Applied Physics Letters 69 (12), 1804-1806, 1996 | 472 | 1996 |
A capacitance standard based on counting electrons MW Keller, AL Eichenberger, JM Martinis, NM Zimmerman Science 285 (5434), 1706-1709, 1999 | 310 | 1999 |
Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor A Fujiwara, H Inokawa, K Yamazaki, H Namatsu, Y Takahashi, ... Applied Physics Letters 88 (5), 2006 | 168 | 2006 |
Current quantization due to single-electron transfer in Si-wire charge-coupled devices A Fujiwara, NM Zimmerman, Y Ono, Y Takahashi Applied physics letters 84 (8), 1323-1325, 2004 | 146 | 2004 |
Electrical conductivity of xenon at megabar pressures MI Eremets, EA Gregoryanz, VV Struzhkin, H Mao, RJ Hemley, N Mulders, ... Physical review letters 85 (13), 2797, 2000 | 132 | 2000 |
Submicron gap capacitor for measurement of breakdown voltage in air E Hourdakis, BJ Simonds, NM Zimmerman Review of scientific instruments 77 (3), 2006 | 113 | 2006 |
Excellent charge offset stability in a Si-based single-electron tunneling transistor NM Zimmerman, WH Huber, A Fujiwara, Y Takahashi Applied Physics Letters 79 (19), 3188-3190, 2001 | 111 | 2001 |
Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors OD Jurchescu, BH Hamadani, HD Xiong, SK Park, S Subramanian, ... Applied Physics Letters 92 (13), 2008 | 106 | 2008 |
Formation of strain-induced quantum dots in gated semiconductor nanostructures T Thorbeck, NM Zimmerman AIP Advances 5 (8), 2015 | 87 | 2015 |
Machine learning techniques for state recognition and auto-tuning in quantum dots SS Kalantre, JP Zwolak, S Ragole, X Wu, NM Zimmerman, MD Stewart Jr, ... npj Quantum Information 5 (1), 6, 2019 | 86 | 2019 |
Modulation of the charge of a single-electron transistor by distant defects NM Zimmerman, JL Cobb, AF Clark Physical Review B 56 (12), 7675, 1997 | 85 | 1997 |
Electrical metrology with single electrons NM Zimmerman, MW Keller Measurement Science and Technology 14 (8), 1237, 2003 | 72 | 2003 |
Uncertainty budget for the NIST electron counting capacitance standard, ECCS-1 MW Keller, NM Zimmerman, AL Eichenberger Metrologia 44 (6), 505, 2007 | 66 | 2007 |
Magnetic field tuned energy of a single two-level system in a meso-scopic metal NM Zimmerman, B Golding, WH Haemmerle Physical review letters 67 (10), 1322, 1991 | 64 | 1991 |
Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability NM Zimmerman, WH Huber, B Simonds, E Hourdakis, A Fujiwara, Y Ono, ... Journal of Applied Physics 104 (3), 2008 | 59 | 2008 |
Microscopic Scatterer Displacements Generate the Resistance Noise of H in Pd NM Zimmerman, WW Webb Physical review letters 61 (7), 889, 1988 | 57 | 1988 |
A seven-junction electron pump: design, fabrication, and operation MW Keller, JM Martinis, AH Steinbach, NM Zimmerman IEEE transactions on instrumentation and measurement 46 (2), 307-310, 1997 | 55 | 1997 |
Electrically driven spin qubit based on valley mixing W Huang, M Veldhorst, NM Zimmerman, AS Dzurak, D Culcer Physical Review B 95 (7), 075403, 2017 | 53 | 2017 |
Charge offset stability in tunable-barrier Si single-electron tunneling devices NM Zimmerman, BJ Simonds, A Fujiwara, Y Ono, Y Takahashi, H Inokawa Applied Physics Letters 90 (3), 2007 | 52 | 2007 |
Electrical breakdown in the microscale: Testing the standard theory E Hourdakis, GW Bryant, NM Zimmerman Journal of Applied Physics 100 (12), 2006 | 48 | 2006 |