| Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ... IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017 | 115 | 2017 |
| Characterization of GigaRad total ionizing dose and annealing effects on 28-nm bulk MOSFETs CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, F Faccio, ... IEEE Transactions on Nuclear Science 64 (10), 2639-2647, 2017 | 56 | 2017 |
| Dose-rate sensitivity of 65-nm MOSFETs exposed to ultrahigh doses G Borghello, F Faccio, E Lerario, S Michelis, S Kulis, DM Fleetwood, ... IEEE Transactions on Nuclear Science 65 (8), 1482-1487, 2018 | 48 | 2018 |
| Characterization and modeling of gigarad-TID-induced drain leakage current of 28-nm bulk MOSFETs CM Zhang, F Jazaeri, G Borghello, F Faccio, S Mattiazzo, A Baschirotto, ... IEEE Transactions on Nuclear Science 66 (1), 38-47, 2018 | 40 | 2018 |
| Charge buildup and spatial distribution of interface traps in 65-nm pMOSFETs irradiated to ultrahigh doses S Bonaldo, S Gerardin, X Jin, A Paccagnella, F Faccio, G Borghello, ... IEEE Transactions on Nuclear Science 66 (7), 1574-1583, 2019 | 37 | 2019 |
| Impact of GigaRad ionizing dose on 28 nm bulk MOSFETs for future HL-LHC A Pezzotta, CM Zhang, F Jazaeri, C Bruschini, G Borghello, F Faccio, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 146-149, 2016 | 24 | 2016 |
| Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses G Borghello, E Lerario, F Faccio, HD Koch, G Termo, S Michelis, ... Microelectronics Reliability 116, 114016, 2021 | 23 | 2021 |
| Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout M Bucher, A Nikolaou, A Papadopoulou, N Makris, L Chevas, G Borghello, ... 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018 | 23 | 2018 |
| GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, F Faccio, ... 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room …, 2016 | 20 | 2016 |
| Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, S Mattiazzo, ... 2017 47th European Solid-State Device Research Conference (ESSDERC), 30-33, 2017 | 19 | 2017 |
| Modeling of high total ionizing dose (TID) effects for enclosed layout transistors in 65 nm bulk CMOS A Nikolaou, M Bucher, N Makris, A Papadopoulou, L Chevas, G Borghello, ... 2018 International Semiconductor Conference (CAS), 133-136, 2018 | 16 | 2018 |
| Effects of bias and temperature on the dose-rate sensitivity of 65-nm CMOS transistors G Borghello, F Faccio, G Termo, S Michelis, S Costanzo, HD Koch, ... IEEE Transactions on Nuclear Science 68 (5), 573-580, 2021 | 13 | 2021 |
| Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS L Chevas, A Nikolaou, M Bucher, N Makris, A Papadopoulou, A Zografos, ... 2018 25th International Conference" Mixed Design of Integrated Circuits and …, 2018 | 13 | 2018 |
| Bias dependence of total ionizing dose effects on 28-nm bulk MOSFETs CM Zhang, F Jazaeri, G Borghello, S Mattiazzo, A Baschirotto, C Enz 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference …, 2018 | 9 | 2018 |
| A generalized EKV charge-based MOSFET model including oxide and interface traps CM Zhang, F Jazaeri, G Borghello, S Mattiazzo, A Baschirotto, C Enz Solid-State Electronics 177, 107951, 2021 | 8 | 2021 |
| Extending a 65nm CMOS process design kit for high total ionizing dose effects A Nikolaou, M Bucher, N Makris, A Papadopoulou, L Chevas, G Borghello, ... 2018 7th International Conference on Modern Circuits and Systems …, 2018 | 8 | 2018 |
| Total ionizing dose effects on ring-oscillators and SRAMs in a commercial 28 nm CMOS technology G Borghello, G Bergamin, D Ceresa, R Pejašinović, FP Diaz, K Kloukinas, ... Journal of Instrumentation 18 (02), C02003, 2023 | 6 | 2023 |
| Ultra-high total ionizing dose effects in a highly integrated and RF-agile transceiver J Budroweit, M Jaksch, G Borghello 2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC), 1-4, 2020 | 6 | 2020 |
| Generic Analog 8 Bit DAC IP Block in 28nm CMOS for the High Energy Physics Community M Piller, R Ballabriga, FN Bandi, G Borghello, D Ceresa, R Pejasinovic, ... 2022 Austrochip Workshop on Microelectronics (Austrochip), 5-8, 2022 | 5 | 2022 |
| Mobility degradation of 28-nm bulk MOSFETs irradiated to ultrahigh total ionizing doses CM Zhang, F Jazaeri, G Borghello, S Mattiazzo, A Baschirotto, C Enz 2018 IEEE International Conference on Integrated Circuits, Technologies and …, 2018 | 5 | 2018 |
