| Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer N Hayama, K Honjo IEEE Electron Device Letters 11 (9), 388-390, 1990 | 118 | 1990 |
| Group delay equalized UWB InGaP/GaAs HBT MMIC amplifier using negative group delay circuits KP Ahn, R Ishikawa, K Honjo IEEE Transactions on Microwave Theory and Techniques 57 (9), 2139-2147, 2009 | 98 | 2009 |
| Parasitic compensation design technique for a C-band GaN HEMT class-F amplifier K Kuroda, R Ishikawa, K Honjo IEEE transactions on microwave theory and techniques 58 (11), 2741-2750, 2010 | 88 | 2010 |
| Microwave. millimeter wave transmitting and receiving module K Honjo US Patent 5,404,581, 1995 | 73 | 1995 |
| High-f/sub max/AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p/sup+//p regrown base contacts H Shimawaki, Y Amamiya, N Furuhata, K Honjo IEEE Transactions on Electron Devices 42 (10), 1735-1744, 1995 | 70 | 1995 |
| A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits K Honjo Solid-State Electronics 44 (8), 1477-1482, 2000 | 64 | 2000 |
| 5.65 GHz high-efficiency GaN HEMT power amplifier with harmonics treatment up to fourth order M Kamiyama, R Ishikawa, K Honjo IEEE Microwave and Wireless Components Letters 22 (6), 315-317, 2012 | 57 | 2012 |
| A low phase-noise 38-GHz HBT MMIC oscillator utilizing a novel transmission line resonator K Hosoya, S Tanaka, Y Amamiya, T Niwa, H Shimawaki, K Honjo 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 00CH37017 …, 2000 | 55 | 2000 |
| Monolithic integrated circuit device K Honjo US Patent 5,202,752, 1993 | 52 | 1993 |
| Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP S Tanaka, H Shimawaki, K Kasahara, K Honjo IEEE transactions on electron devices 40 (7), 1194-1201, 1993 | 50 | 1993 |
| A Miniature Broadband Doherty Power Amplifier With a Series-Connected Load S Watanabe, Y Takayama, R Ishikawa, K Honjo IEEE Transactions on Microwave Theory and Techniques 63 (2), 572-579, 2015 | 45 | 2015 |
| 12-GHz-band GaAs dual-gate MESFET monolithic mixers T Sugiura, K Honjo, T Tsuji IEEE transactions on microwave theory and techniques 33 (2), 105-110, 1985 | 44 | 1985 |
| 50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs Y Suzuki, H Shimawaki, Y Amamiya, N Nagano, T Niwa, H Yano, K Honjo IEEE Journal of Solid-State Circuits 33 (9), 1336-1341, 1998 | 40 | 1998 |
| GaAs FET ultrabroad-band amplifiers for Gbit/s data rate systems K Honjo, Y Takayama IEEE Transactions on Microwave Theory and Techniques 29 (7), 629-636, 1981 | 40 | 1981 |
| Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors S Tanaka, H Hayama, K Honjo, A Furukawa, T Baba Electronics Letters 26, 1439-1441, 1990 | 38 | 1990 |
| Novel design approach for X-band GaAs monolithic analog 1/4 frequency divider K Honjo, M Madihian IEEE transactions on Microwave Theory and Techniques 34 (4), 436-441, 1986 | 38 | 1986 |
| A low-noise Ku-band AlGaAs/GaAs HBT oscillator N Hayama, SR LeSage, M Madihian, K Honjo 1988., IEEE MTT-S International Microwave Symposium Digest, 679-682, 1988 | 37 | 1988 |
| Fully self-aligned ALGaAs/GaAs heterojunction bipolar transistors for high-speed integrated-circuits application N Hayama, M Madihian, A Okamoto, H Toyoshima, K Honjo IEEE transactions on electron devices 35 (11), 1771-1777, 1988 | 35 | 1988 |
| Practical realization of self-complementary broadband antenna on low-loss resin substrate for UWB applications A Saitou, T Iwaki, K Honjo, K Sato, T Koyama, K Watanabe 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No …, 2004 | 34 | 2004 |
| Inverse class-F AlGaN/GaN HEMT microwave amplifier based on lumped element circuit synthesis method Y Abe, R Ishikawa, K Honjo IEEE transactions on microwave theory and techniques 56 (12), 2748-2753, 2008 | 33 | 2008 |
Hiroshi Mizutani 水谷 浩東京工業高等専門学校Verified email at tokyo-ct.ac.jp
