| Structure and Performance Co-optimization for the Development of Highly Reliable Spin-Orbit Torque Magnetic Random Access Memory SZ Rahaman, YC Hsin, SY Yang, YJ Chang, HH Lee, KM Chen, IJ Wang, ... 2023 International VLSI Symposium on Technology, Systems and Applications …, 2023 | 30 | 2023 |
| High speed (1ns) and low voltage (1.5 V) demonstration of 8Kb SOT-MRAM array MY Song, CM Lee, SY Yang, GL Chen, KM Chen, IJ Wang, YC Hsin, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 16 | 2022 |
| Stochastic switching in a magnetic-tunnel-junction neuron and a bias-dependent Néel-Arrhenius model MH Wu, IT Wang, MC Hong, KM Chen, YC Tseng, JH Wei, TH Hou Physical Review Applied 18 (6), 064034, 2022 | 13 | 2022 |
| An 8kb spin-orbit-torque magnetic random-access memory GL Chen, IJ Wang, PS Yeh, SH Li, SY Yang, YC Hsin, HT Wu, HM Hsiao, ... 2021 International Symposium on VLSI Technology, Systems and Applications …, 2021 | 9 | 2021 |
| Study of Al interdiffusion in ultrathin β-Ta/Co2FeAl/MgO heterostructures for enhanced spin-orbit torque V Bhardwaj, KM Chen, YC Tseng, R Chatterjee Physica B: Condensed Matter 574, 411662, 2019 | 8 | 2019 |
| Effects of synthetic antiferromagnetic coupling on back-hopping of spin-transfer torque devices KM Chen, CW Cheng, JH Wei, YC Hsin, YC Tseng Applied Physics Letters 117 (7), 2020 | 6 | 2020 |
| A 4K–400K wide operating-temperature-range MRAM technology with ultrathin composite free layer and magnesium spacer MC Hong, YJ Chang, YC Hsin, LM Liu, KM Chen, YH Su, GL Chen, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 3 | 2022 |
| High RA Dual-MTJ SOT-MRAM devices for High Speed (10ns) Compute-in-Memory Applications MY Song, KL Chen, KM Chen, KT Chang, IJ Wang, YC Hsin, CY Lin, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| Development of highly manufacturable, reliable, and energy-efficient spin-orbit torque magnetic random access memory (SOT-MRAM) SZ Rahaman, YJ Chang, YC Hsin, SY Yang, FM Chen, KM Chen, IJ Wang, ... 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 2 | 2022 |
| Stray field and combined effects on device miniaturization of the magnetic tunnel junctions CW Cheng, KM Chen, JH Wei, YC Hsin, SS Sheu, CI Wu, YC Tseng Journal of Physics D: Applied Physics 55 (19), 195002, 2022 | 2 | 2022 |
| Insertion Trade-off Effects on the Spin-Transfer Torque Memory Explored by In Situ X-ray AK Ramesh, KM Chen, YJ Lin, P Singh, JH Wei, YC Hsin, CI Wu, ... ACS Applied Electronic Materials 3 (9), 4047-4055, 2021 | 2 | 2021 |
| U-MRAM: Transistor-less, high-speed (10 ns), low-voltage (0.6 V), field-free unipolar MRAM for high-density data memory MH Wu, MC Hong, C Shih, YJ Chang, YC Hsin, SC Chiu, KM Chen, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 1 | 2023 |
| Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing KM Chen, CY Lo, SC Chiu, YH Su, YJ Chang, GL Chen, HH Lee, ... Applied Physics Letters 125 (1), 2024 | | 2024 |
| U-MRAM PUF: A Novel Unipolar-MRAM for Power and Area Efficient Hardware Root of Trust C Shih, MC Hong, CY Wang, GL Chen, HH Lee, KM Chen, BC Chiou, ... 2024 International VLSI Symposium on Technology, Systems and Applications …, 2024 | | 2024 |
| Design of High-RA STT-MRAM for Future Energy-Efficient In-Memory Computing MC Hong, YH Su, GL Chen, YC Hsin, YJ Chang, KM Chen, SY Yang, ... 2023 International VLSI Symposium on Technology, Systems and Applications …, 2023 | | 2023 |
| The thermal stability improvement of spin-orbit-torque (SOT) devices with a thin PtMn insertion YJ Chang, FM Chen, KM Chen, SY Yang, YC Hsin, SZ Rahaman, IJ Wang, ... 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | | 2022 |