Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources R Olshansky, C Su, J Manning, W Powazinik IEEE journal of quantum electronics 20 (8), 838-854, 1984 | 324 | 1984 |
The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasers J Manning, R Olshansky, C Su IEEE journal of quantum electronics 19 (10), 1525-1530, 1983 | 281 | 1983 |
Measurement of the refractive index of liquids at 1.3 and 1.5 micron using a fibre optic Fresnel ratio meter CB Kim, CB Su Measurement Science and Technology 15 (9), 1683, 2004 | 261 | 2004 |
Fiber optic reflectometer for velocity and fraction ratio measurements in multiphase flows KA Chang, HJ Lim, CB Su Review of scientific instruments 74 (7), 3559-3565, 2003 | 108 | 2003 |
Electrospinning of silica nanochannels for single molecule detection M Wang, N Jing, CB Su, J Kameoka, CK Chou, MC Hung, KA Chang Applied physics letters 88 (3), 2006 | 93 | 2006 |
Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers CB Su, V Lanzisera Applied physics letters 45 (12), 1302-1304, 1984 | 88 | 1984 |
Characterization of the dynamics of semiconductor lasers using optical modulation CB Su, J Eom, CH Lange, CB Kim, RD Lauer, WC Rideout, JS LaCourse IEEE journal of quantum electronics 28 (1), 118-127, 1992 | 81 | 1992 |
Ultra-high-speed modulation of 1.3-µm InGaAsP diode lasers C Su, V Lanzisera IEEE journal of quantum electronics 22 (9), 1568-1578, 1986 | 78 | 1986 |
20 GHz bandwidth InGaAs photodetector for long-wavelength microwave optical links J Schlafer, CB Su, W Powazinik, RB Lauer Electronics Letters 11 (21), 469-471, 1985 | 75 | 1985 |
Carrier lifetime measurement for determination of recombination rates and doping levels of III‐V semiconductor light sources CB Su, R Olshansky Applied Physics Letters 41 (9), 833-835, 1982 | 65 | 1982 |
Explanation of low‐frequency relative intensity noise in semiconductor lasers CB Su, J Schlafer, RB Lauer Applied physics letters 57 (9), 849-851, 1990 | 63 | 1990 |
Achieving variation of the optical path length by a few millimeters at millisecond rates for imaging of turbid media and optical interferometry: a new technique CB Su Optics letters 22 (10), 665-667, 1997 | 62 | 1997 |
15 GHz direct modulation bandwidth of vapour-phase regrown 1.3 μm InGaAsP buried-heterostructure lasers under cw operation at room temperature CB Su, V Lanzisera, R Olshansky, W Powazinik, E Meland, J Schlafer, ... Electronics Letters 13 (21), 577-579, 1985 | 62 | 1985 |
Measurement of nonlinear gain from FM modulation index of InGaAsP lasers CB Su, V Lanzisera, R Olshansky Electronics Letters 20 (21), 893-895, 1985 | 55 | 1985 |
Bubble velocity, diameter, and void fraction measurements in a multiphase flow using fiber optic reflectometer HJ Lim, KA Chang, CB Su, CY Chen Review of Scientific Instruments 79 (12), 2008 | 53 | 2008 |
Effect of nonlinear gain on the bandwidth of semiconductor lasers R Olshansky, DM Fye, J Manning, CB Su Electronics Letters 17 (21), 721-722, 1985 | 53 | 1985 |
Measurement of radiative recombination coefficient and carrier leakage in 1.3? m InGaAsP lasers with lightly doped active layers CB Su, J Schlafer, J Manning, R Olshansky Electronics Letters 25 (18), 1108-1110, 1982 | 53 | 1982 |
A fibre optic Fresnel ratio meter for measurements of solute concentration and refractive index change in fluids KA Chang, HJ Lim, CB Su Measurement Science and Technology 13 (12), 1962, 2002 | 52 | 2002 |
Dielectric grating induced by cavity standing wave as a new explanation of origin of nonlinear gain in semiconductor diode lasers CB Su Electronics Letters 24 (7), 370-371, 1988 | 51 | 1988 |
12.5‐GHz direct modulation bandwidth of vapor phase regrown 1.3‐μm InGaAsP buried heterostructure lasers CB Su, V Lanzisera, W Powazinik, E Meland, R Olshansky, RB Lauer Applied physics letters 46 (4), 344-346, 1985 | 51 | 1985 |