All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale C Haffner, W Heni, Y Fedoryshyn, J Niegemann, A Melikyan, DL Elder, ... Nature Photonics 9 (8), 525-528, 2015 | 597 | 2015 |
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021 | 238 | 2021 |
Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching B Cheng, A Emboras, Y Salamin, F Ducry, P Ma, Y Fedoryshyn, ... Communications Physics 2 (1), 28, 2019 | 66 | 2019 |
Opto-electronic memristors: Prospects and challenges in neuromorphic computing A Emboras, A Alabastri, P Lehmann, K Portner, C Weilenmann, P Ma, ... Applied Physics Letters 117 (23), 2020 | 54 | 2020 |
Atomic scale photodetection enabled by a memristive junction A Emboras, A Alabastri, F Ducry, B Cheng, Y Salamin, P Ma, S Andermatt, ... ACS nano 12 (7), 6706-6713, 2018 | 43 | 2018 |
High-speed plasmonic Mach-Zehnder modulator in a waveguide C Haffner, W Heni, Y Fedoryshyn, DL Elder, A Melikyan, B Baeuerle, ... 2014 The European Conference on Optical Communication (ECOC), 1-3, 2014 | 23 | 2014 |
Hybrid Mode-Space–Real-Space Approximation for First-Principles Quantum Transport Simulation of Inhomogeneous Devices F Ducry, MH Bani-Hashemian, M Luisier Physical Review Applied 13 (4), 044067, 2020 | 14 | 2020 |
Electro-thermal transport in disordered nanostructures: a modeling perspective F Ducry, J Aeschlimann, M Luisier Nanoscale Advances 2 (7), 2648-2667, 2020 | 12 | 2020 |
An ab initio study on resistance switching in hexagonal boron nitride F Ducry, D Waldhoer, T Knobloch, M Csontos, N Jimenez Olalla, ... npj 2D Materials and Applications 6 (1), 58, 2022 | 10 | 2022 |
Ab-initio modeling of CBRAM cells: From ballistic transport properties to electro-thermal effects F Ducry, A Emboras, S Andermatt, MH Bani-Hashemian, B Cheng, ... 2017 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2017 | 9 | 2017 |
On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, T Müller, ... arXiv preprint arXiv:2008.04144, 2020 | 7 | 2020 |
Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors S Fiore, C Klinkert, F Ducry, J Backman, M Luisier Materials 15 (3), 1062, 2022 | 6 | 2022 |
Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme J Aeschlimann, MH Bani-Hashemian, F Ducry, A Emboras, M Luisier Solid-State Electronics 199, 108493, 2023 | 5 | 2023 |
Multiscale Modeling of Metal-Oxide-Metal Conductive Bridging Random-Access Memory Cells: From Ab Initio to Finite-Element Calculations J Aeschlimann, F Ducry, C Weilenmann, J Leuthold, A Emboras, M Luisier Physical Review Applied 19 (2), 024058, 2023 | 4 | 2023 |
Microcanonical RT-TDDFT simulations of realistically extended devices S Andermatt, MH Bani-Hashemian, F Ducry, S Brück, S Clima, G Pourtois, ... The Journal of Chemical Physics 149 (12), 2018 | 4 | 2018 |
Threshold Switching Enabled Sub-pW-Leakage, Hysteresis-Free Circuits B Cheng, A Emboras, E Passerini, M Lewerenz, U Koch, L Wu, J Liao, ... IEEE Transactions on Electron Devices 68 (6), 3112-3118, 2021 | 3 | 2021 |
A Hybrid Mode-Space/Real-Space Scheme for DFT+ NEGF Device Simulations F Ducry, MH Bani-Hashemian, M Luisier 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 3 | 2019 |
Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt F Xie, F Ducry, M Luisier, J Leuthold, T Schimmel Advanced Electronic Materials 8 (10), 2200225, 2022 | 1 | 2022 |
Ab initio Quantum Transport in Conductive Bridging Random Access Memory F Ducry ETH Zurich, 2021 | 1 | 2021 |
Ultra-steep-slope transistor enabled by an atomic memristive switch B Cheng, A Emboras, E Passerini, M Lewerenz, M Eppenberger, ... Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices …, 2020 | 1 | 2020 |