| Apparatus for removing organic resist from semiconductor S Fujimura, K Shinagawa, N Abe US Patent 5,961,775, 1999 | 411 | 1999 |
| Process and apparatus for ashing treatment K Shinagawa, S Fujimura US Patent 5,478,403, 1995 | 235 | 1995 |
| Plasma surface treatment method and resulting device T Takamatsu, S Fujimura US Patent 6,551,939, 2003 | 229 | 2003 |
| Hydrogen molecules in crystalline silicon treated with atomic hydrogen K Murakami, N Fukata, S Sasaki, K Ishioka, M Kitajima, S Fujimura, ... Physical review letters 77 (15), 3161, 1996 | 171 | 1996 |
| Method and apparatus for microwave plasma anisotropic dry etching S Fujimura US Patent 4,609,428, 1986 | 96 | 1986 |
| Resist stripping in an O2+H2O plasma downstream S Fujimura, K Shinagawa, MT Suzuki, M Nakamura Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 78 | 1991 |
| Hydrogen molecules and hydrogen-related defects in crystalline silicon N Fukata, S Sasaki, K Murakami, K Ishioka, KG Nakamura, M Kitajima, ... Physical review B 56 (11), 6642, 1997 | 75 | 1997 |
| Initial stage of native oxide growth on hydrogen terminated silicon (111) surfaces H Ogawa, K Ishikawa, C Inomata, S Fujimura Journal of applied physics 79 (1), 472-477, 1996 | 68 | 1996 |
| Microwave plasma processing apparatus S Fujimura, H Yano US Patent 4,512,868, 1985 | 61 | 1985 |
| Process and apparatus for plasma treatment S Fujimura US Patent 4,718,976, 1988 | 60 | 1988 |
| Processing for stripping organic material S Fujimura, K Shinagawa, K Hikazutani US Patent 4,983,254, 1991 | 57 | 1991 |
| Ashing of ion-implanted resist layer S Fujimura, J Konno, K Hikazutani, H Yano Japanese Journal of Applied Physics 28 (10R), 2130, 1989 | 56 | 1989 |
| Ashing method for removing an organic film on a substance of a semiconductor device under fabrication K Shinagawa, S Fujimura, K Hikazutani US Patent 4,961,820, 1990 | 54 | 1990 |
| Plasma treating method using hydrogen gas S Fujimura, T Takeuchi, T Miyanaga, Y Nakano, Y Matoba US Patent 5,403,436, 1995 | 50 | 1995 |
| Ashing method for removing an organic film on a substance of a semiconductor device under fabrication K Shinagawa, S Fujimura, K Hikazutani US Patent 5,057,187, 1991 | 50 | 1991 |
| Hydrogen passivation of donors and hydrogen states in heavily doped n-type silicon N Fukata, S Sasaki, S Fujimura, H Haneda, KMK Murakami Japanese journal of applied physics 35 (7R), 3937, 1996 | 48 | 1996 |
| Heavy metal contamination from resists during plasma stripping S Fujimura, H Yano Journal of the Electrochemical Society 135 (5), 1195, 1988 | 48 | 1988 |
| Native oxide removal on Si surfaces by NF3-added hydrogen and water vapor plasma downstream treatment J Kikuchi, M Iga, H Ogawa, S Fujimura, HYH Yano Japanese journal of applied physics 33 (4S), 2207, 1994 | 44 | 1994 |
| Additive nitrogen effects on oxygen plasma downstream ashing S Fujimura, K Shinagawa, M Nakamura, H Yano Japanese journal of applied physics 29 (10R), 2165, 1990 | 44 | 1990 |
| Microwave plasma processing apparatus S Fujimura US Patent 5,024,748, 1991 | 43 | 1991 |
