Label-free SnO2 nanowire FET biosensor for protein detection MH Jakob, B Dong, S Gutsch, C Chatelle, A Krishnaraja, W Weber, ... Nanotechnology 28 (24), 245503, 2017 | 35 | 2017 |
Flexible thin film pH sensor based on low‐temperature atomic layer deposition MH Jakob, S Gutsch, C Chatelle, A Krishnaraja, J Fahlteich, W Weber, ... physica status solidi (RRL)–Rapid Research Letters 11 (7), 1700123, 2017 | 22 | 2017 |
Tuning of source material for InAs/InGaAsSb/GaSb application-specific vertical nanowire tunnel FETs A Krishnaraja, J Svensson, E Memisevic, Z Zhu, AR Persson, E Lind, ... ACS Applied Electronic Materials 2 (9), 2882-2887, 2020 | 18 | 2020 |
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap A Krishnaraja, J Svensson, E Lind, LE Wernersson Applied Physics Letters 115 (14), 2019 | 12 | 2019 |
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction D Dzhigaev, J Svensson, A Krishnaraja, Z Zhu, Z Ren, Y Liu, S Kalbfleisch, ... Nanoscale 12 (27), 14487-14493, 2020 | 10 | 2020 |
Capacitance measurements in vertical III–V nanowire TFETs M Hellenbrand, E Memisevic, J Svensson, A Krishnaraja, E Lind, ... IEEE Electron Device Letters 39 (7), 943-946, 2018 | 9 | 2018 |
Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin = 32 mV/dec and gm/ID = 100 V-1 A Krishnaraja, J Svensson, LE Wernersson 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 17-18, 2020 | 1 | 2020 |
Effect of gate oxide defects on tunnel transistor RF performance M Hellenbrand, E Memisevic, J Svensson, A Krishnaraja, E Lind, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 1 | 2018 |
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S< 100 mV/dec A Krishnaraja, Z Zhu, J Svensson, LE Wernersson IEEE Electron Device Letters 44 (7), 1064-1067, 2023 | | 2023 |
Vertical III-V Nanowire Transistors for Low-Power Electronics A Krishnaraja | | 2023 |
Supplementary Information: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction D Dzhigaev, J Svensson, A Krishnaraja, Z Zhu, Z Ren, Y Liu, S Kalbfleisch, ... | | 2022 |
Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope A Krishnaraja, J Svensson, E Lind, LE Wernersson | | 2019 |
MS40-03| NANO-SCALE STRAIN MAPPING IN COMPLETE NANOWIRE BASED ELECTRONIC DEVICES BY BRAGG COHERENT XRay DIFFRACTION D Dzhigaev Acta Cryst 75, e642, 2019 | | 2019 |
Fabrication of Tunnel Field-Effect Transistors A Krishnaraja, E Memisevic, M Hellenbrand, J Svensson, E Lind, ... Swedish Microwave Days 2018, 2018 | | 2018 |
RF Characterisation of Vertical III-V Nanowire Tunnel FETs M Hellenbrand, E Memisevic, J Svensson, A Krishnaraja, E Lind, ... Swedish Microwave Days 2018, 2018 | | 2018 |