Articles with public access mandates - Daxin HanLearn more
Not available anywhere: 4
Impact ionization control in 50 nm low-noise high-speed InP HEMTs with InAs channel insets
DC Ruiz, T Saranovac, D Han, O Ostinelli, CR Bolognesi
2019 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2019
Mandates: Swiss National Science Foundation
A physical route to porous ethyl cellulose microspheres loaded with TiO2 nanoparticles
W Cai, H Yang, D Han, X Guo
Journal of Applied Polymer Science 131 (19), 2014
Mandates: National Natural Science Foundation of China
Synthesis of “brain-like” hierarchical porous microspheres by emulsion-solvent evaporation
W Zhu, J Ren, Z Wang, D Han, H Yang, X Guo
Materials Letters 155, 130-133, 2015
Mandates: National Natural Science Foundation of China
New GaInAs/InAs/InP composite channels for mm-wave low-noise InP HEMTs
DC Ruiz, T Saranovac, D Han, O Ostinelli, CR Bolognesi
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
Mandates: Swiss National Science Foundation
Available somewhere: 5
Ultrafine cellulose nanofiber‐assisted physical and chemical cross‐linking of MXene sheets for electromagnetic interference shielding
N Wu, Z Zeng, N Kummer, D Han, R Zenobi, G Nyström
Small Methods 5 (12), 2100889, 2021
Mandates: Swiss National Science Foundation
InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz
AM Arabhavi, F Ciabattini, S Hamzeloui, R Flückiger, T Saranovac, D Han, ...
IEEE Transactions on Electron Devices 69 (4), 2122-2129, 2022
Mandates: Swiss National Science Foundation
InAs channel inset effects on the DC, RF, and noise properties of InP pHEMTs
DC Ruiz, T Saranovac, D Han, A Hambitzer, AM Arabhavi, O Ostinelli, ...
IEEE Transactions on Electron Devices 66 (11), 4685-4691, 2019
Mandates: Swiss National Science Foundation
Effects of electrochemical etching on InP HEMT fabrication
T Saranovac, DC Ruiz, D Han, AM Arabhavi, O Ostinelli, CR Bolognesi
IEEE Transactions on Semiconductor Manufacturing 32 (4), 496-501, 2019
Mandates: Swiss National Science Foundation
Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance
D Calvo Ruiz, D Han, G Bonomo, T Saranovac, O Ostinelli, CR Bolognesi
physica status solidi (a) 218 (3), 2000191, 2021
Mandates: Swiss National Science Foundation
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