| Modeling and Simulation of DG SOI N FinFET 10 nm using Hafnium Oxide A Lazzaz, K Bousbahi, M Ghamnia 2021 IEEE 21st International Conference on Nanotechnology (NANO), 177-180, 2021 | 8 | 2021 |
| Optimized mathematical model of experimental characteristics of 14 nm TG N FinFET A Lazzaz, K Bousbahi, M Ghamnia Micro and Nanostructures 165, 207210, 2022 | 7 | 2022 |
| Characterization of microwave magnetic narrow band filters by ferromagnetic resonance K Bousbahi, R Marcelli Journal of Applied Physics 87 (9), 5971-5973, 2000 | 7 | 2000 |
| Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 nm, 7 nm and 5 nm node technologies A Lazzaz, K Bousbahi, M Ghamnia Facta universitatis-series: Electronics and Energetics 36 (1), 1-16, 2023 | 5 | 2023 |
| Performance analysis and optimization of 10 nm TG n-and p-channel SOI FinFETs for circuit applications A Lazzaz, K Bousbahi, M Ghamnia Facta Universitatis, Series: Electronics and Energetics 35 (4), 619-634, 2022 | 5 | 2022 |
| A New GAA FinFET without n-well or p-well A Lazzaz, K Bousbahi, M Ghamnia Sumy State University, 2024 | 1 | 2024 |
| High Temperature Effects on the Static Performance of 14 nm TG SOI N FinFET A Lazzaz, K Bousbahi, M Ghamnia Sumy State University, 2023 | | 2023 |
| Impact of the geometric parameters on the performance of silicon TG SOI N FinFET 5nm K Bousbahi, M Ghamnia | | 2022 |
| Extraction of some trapping parameters from experimental thermoluminescence (TL) signal of alumina (α-Al2O3) using analytical models Z Youcefi, M Ghamnia, MA Dahamni, A Loukil, K Bousbahi Chinese Journal of Physics 70, 82-90, 2021 | | 2021 |
