Articles with public access mandates - Alexander KloesLearn more
Not available anywhere: 53
Compact model for short-channel junctionless accumulation mode double gate MOSFETs
T Holtij, M Graef, FM Hain, A Kloes, B Iñíguez
IEEE Transactions on Electron Devices 61 (2), 288-299, 2013
Mandates: German Research Foundation, Government of Spain
Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region
T Holtij, M Schwarz, A Kloes, B Iniguez
Solid-state electronics 90, 107-115, 2013
Mandates: German Research Foundation, Government of Spain
2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage
T Holtij, M Schwarz, A Kloes, B Iñíguez
2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012
Mandates: German Research Foundation, Government of Spain
Efficient and low-voltage vertical organic permeable base light-emitting transistors
Z Wu, Y Liu, E Guo, G Darbandy, SJ Wang, R Hübner, A Kloes, ...
Nature Materials 20 (7), 1007-1014, 2021
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
2-D physics-based compact DC modeling of double-gate tunnel-FETs
F Horst, A Farokhnejad, QT Zhao, B Iniguez, A Kloes
IEEE Transactions on Electron Devices 66 (1), 132-138, 2018
Mandates: Government of Spain, Federal Ministry of Education and Research, Germany
A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current
M Graef, T Holtij, F Hain, A Kloes, B Iniguez
Microelectronics Journal 45 (9), 1144-1153, 2014
Mandates: German Research Foundation, Government of Spain
Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs
M Schwarz, T Holtij, A Kloes, B Iniguez
Solid-State Electronics 69, 72-84, 2012
Mandates: German Research Foundation, Government of Spain
Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation
F Hain, M Graef, B Iñíguez, A Kloes
Solid-State Electronics 133, 17-24, 2017
Mandates: European Commission, Federal Ministry of Education and Research, Germany
2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current
M Schwarz, T Holtij, A Kloes, B Iñíguez
Solid-State Electronics 63 (1), 119-129, 2011
Mandates: German Research Foundation, Government of Spain
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs, including simple treatment of quantization effects
T Holtij, A Kloes, B Iniguez
Solid-State Electronics 112, 85-98, 2015
Mandates: German Research Foundation, Government of Spain
Quantum Confinement and Volume Inversion inModel for Short-Channel Tri-Gate MOSFETs
A Kloes, M Schwarz, T Holtij, A Navas
IEEE transactions on electron devices 60 (8), 2691-2694, 2013
Mandates: German Research Foundation
Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects
T Holtij, M Graef, A Kloes, B Iniguez
Microelectronics Journal 45 (9), 1220-1225, 2014
Mandates: German Research Foundation, Government of Spain
Charge-based model for the drain-current variability in organic thin-film transistors due to carrier-number and correlated-mobility fluctuation
A Nikolaou, G Darbandy, J Leise, J Pruefer, JW Borchert, M Geiger, ...
IEEE Transactions on Electron Devices 67 (11), 4667-4671, 2020
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Advanced analytical modeling of double-gate Tunnel-FETs–A performance evaluation
M Graef, F Hosenfeld, F Horst, A Farokhnejad, F Hain, B Iñíguez, A Kloes
Solid-State Electronics 141, 31-39, 2018
Mandates: Government of Spain, Federal Ministry of Education and Research, Germany
Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs
M Schwarz, T Holtij, A Kloes, B Iniguez
Solid-state electronics 82, 86-98, 2013
Mandates: German Research Foundation, Government of Spain
Performance analysis of parallel array of nanowires and a nanosheet in SG, DG and GAA FETs
G Darbandy, S Mothes, M Schröter, A Kloes, M Claus
Solid-State Electronics 162, 107641, 2019
Mandates: German Research Foundation
Characterization of the charge-trap dynamics in organic thin-film transistors
G Darbandy, C Roemer, J Leise, J Pruefer, JW Borchert, H Klauk, A Kloes
2019 MIXDES-26th International Conference" Mixed Design of Integrated …, 2019
Mandates: German Research Foundation, European Commission, Federal Ministry of …
Two-dimensional modeling of an ultra-thin body single-gate Si tunnel-FET
M Graef, T Holtij, F Hain, A Kloes, B Iñíguez
2014 15th International Conference on Ultimate Integration on Silicon (ULIS …, 2014
Mandates: German Research Foundation
Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts
A Farokhnejad, M Schwarz, F Horst, B Iñíguez, F Lime, A Kloes
Solid-State Electronics 159, 191-196, 2019
Mandates: Government of Spain, Federal Ministry of Education and Research, Germany
Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs
M Graef, T Holtij, F Hain, A Kloes, B Iñiguez
Proceedings of the 20th International Conference Mixed Design of Integrated …, 2013
Mandates: German Research Foundation, Government of Spain
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