Apparatus for taking measurements in the ear B Kraus, E Kahler, A Klös, H Mannebach US Patent 6,358,216, 2002 | 146 | 2002 |
Compact model for short-channel junctionless accumulation mode double gate MOSFETs T Holtij, M Graef, FM Hain, A Kloes, B Iñíguez IEEE Transactions on Electron Devices 61 (2), 288-299, 2013 | 105 | 2013 |
A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling A Kloes, A Kostka Solid-State Electronics 39 (12), 1761-1775, 1996 | 85 | 1996 |
Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region T Holtij, M Schwarz, A Kloes, B Iniguez Solid-state electronics 90, 107-115, 2013 | 61 | 2013 |
Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations forand Subthreshold Slope A Kloes, M Weidemann, D Goebel, BT Bosworth IEEE transactions on electron devices 55 (12), 3467-3475, 2008 | 58 | 2008 |
Organic bipolar transistors SJ Wang, M Sawatzki, G Darbandy, F Talnack, J Vahland, M Malfois, ... Nature 606 (7915), 700-705, 2022 | 54 | 2022 |
2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage T Holtij, M Schwarz, A Kloes, B Iñíguez 2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012 | 44 | 2012 |
Efficient and low-voltage vertical organic permeable base light-emitting transistors Z Wu, Y Liu, E Guo, G Darbandy, SJ Wang, R Hübner, A Kloes, ... Nature Materials 20 (7), 1007-1014, 2021 | 41 | 2021 |
MOS3: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs A Kloes, M Schwarz, T Holtij IEEE Transactions on Electron Devices 59 (2), 349, 2012 | 41 | 2012 |
2-D physics-based compact DC modeling of double-gate tunnel-FETs F Horst, A Farokhnejad, QT Zhao, B Iniguez, A Kloes IEEE Transactions on Electron Devices 66 (1), 132-138, 2018 | 36 | 2018 |
On the physical behavior of cryogenic IV and III–V Schottky barrier MOSFET devices M Schwarz, LE Calvet, JP Snyder, T Krauss, U Schwalke, A Kloes IEEE Transactions on Electron Devices 64 (9), 3808-3815, 2017 | 35 | 2017 |
A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current M Graef, T Holtij, F Hain, A Kloes, B Iniguez Microelectronics Journal 45 (9), 1144-1153, 2014 | 35 | 2014 |
Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs M Schwarz, T Holtij, A Kloes, B Iniguez Solid-State Electronics 69, 72-84, 2012 | 35 | 2012 |
Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation F Hain, M Graef, B Iñíguez, A Kloes Solid-State Electronics 133, 17-24, 2017 | 32 | 2017 |
2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET M Schwarz, M Weidemann, A Kloes, B Iñíguez Solid-State Electronics 54 (11), 1372-1380, 2010 | 32 | 2010 |
Drive mechanism for oscillating electric products of personal use, particularly dry shavers T Brum, A Klös, H Port, W Port, U Schaaf US Patent 6,441,517, 2002 | 32 | 2002 |
Vertical organic permeable dual-base transistors for logic circuits E Guo, Z Wu, G Darbandy, S Xing, SJ Wang, A Tahn, M Göbel, A Kloes, ... Nature Communications 11 (1), 4725, 2020 | 31 | 2020 |
Hair-removing device B Kraus, A Klos US Patent 8,627,573, 2014 | 31 | 2014 |
Drive mechanisms for small electric appliances B Kraus, A Klös US Patent 6,933,630, 2005 | 30 | 2005 |
Infrared thermometer with heatable probe tip and protective cover B Kraus, A Klös, E Kahler, F Beerwerth, H Mannebach US Patent 6,694,174, 2004 | 27 | 2004 |