| A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction S Ikeda, K Miura, H Yamamoto, K Mizunuma, HD Gan, M Endo, S Kanai, ... Nature materials 9 (9), 721-724, 2010 | 4066 | 2010 |
| Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions H Sato, M Yamanouchi, K Miura, S Ikeda, HD Gan, K Mizunuma, ... Applied Physics Letters 99 (4), 2011 | 189 | 2011 |
| MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers K Mizunuma, S Ikeda, JH Park, H Yamamoto, H Gan, K Miura, ... Applied Physics Letters 95 (23), 2009 | 162 | 2009 |
| Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure M Yamanouchi, R Koizumi, S Ikeda, H Sato, K Mizunuma, K Miura, ... Journal of Applied Physics 109 (7), 2011 | 136 | 2011 |
| Magnetic random access memory having perpendicular enhancement layer H Gan, Y Huai, Y Zhou, X Wang, Z Wang, BK Yen US Patent 9,070,855, 2015 | 108 | 2015 |
| Multilayered seed structure for perpendicular MTJ memory element H Gan, Y Huai, BK Yen, RK Malmhall, Y Zhou US Patent 9,793,319, 2017 | 92 | 2017 |
| Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer Z Wang, Y Zhou, H Gan, Y Huai US Patent 9,608,038, 2017 | 84 | 2017 |
| Magnetic memory element with composite perpendicular enhancement layer Y Zhou, BK Yen, H Gan, Y Huai US Patent 9,780,300, 2017 | 82 | 2017 |
| Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile VLSI S Ikeda, H Sato, M Yamanouchi, H Gan, K Miura, K Mizunuma, S Kanai, ... Spin 2 (03), 1240003, 2012 | 82 | 2012 |
| Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions HD Gan, H Sato, M Yamanouchi, S Ikeda, K Miura, R Koizumi, ... Applied Physics Letters 99 (25), 2011 | 66 | 2011 |
| Pd layer thickness dependence of tunnel magnetoresistance properties in CoFeB/MgO-based magnetic tunnel junctions with perpendicular anisotropy CoFe/Pd multilayers K Mizunuma, M Yamanouchi, S Ikeda, H Sato, H Yamamoto, HD Gan, ... Applied physics express 4 (2), 023002, 2011 | 58 | 2011 |
| Transmission electron microscopy study on the effect of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed at different temperatures SV Karthik, YK Takahashi, T Ohkubo, K Hono, HD Gan, S Ikeda, H Ohno Journal of Applied Physics 111 (8), 2012 | 56 | 2012 |
| Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions HD Gan, S Ikeda, W Shiga, J Hayakawa, K Miura, H Yamamoto, ... Applied Physics Letters 96 (19), 2010 | 56 | 2010 |
| Boron composition dependence of magnetic anisotropy and tunnel magnetoresistance in MgO/CoFe (B) based stack structures S Ikeda, R Koizumi, H Sato, M Yamanouchi, K Miura, K Mizunuma, H Gan, ... IEEE transactions on magnetics 48 (11), 3829-3832, 2012 | 48 | 2012 |
| High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications Y Huai, H Gan, Z Wang, P Xu, X Hao, BK Yen, R Malmhall, N Pakala, ... Applied Physics Letters 112 (9), 2018 | 47 | 2018 |
| Photocurrent response in a double barrier structure with quantum dots–quantum well inserted in central well B Hu, X Zhou, Y Tang, H Gan, H Zhu, G Li, H Zheng Physica E: Low-dimensional Systems and Nanostructures 33 (2), 355-358, 2006 | 44 | 2006 |
| Perpendicular STTMRAM device with balanced reference layer H Gan, Y Zhou, Y Huai US Patent 9,024,398, 2015 | 42 | 2015 |
| Threshold switching selector and 1S1R integration development for 3D cross-point STT-MRAM H Yang, X Hao, Z Wang, R Malmhall, H Gan, K Satoh, J Zhang, DH Jung, ... 2017 IEEE International Electron Devices Meeting (IEDM), 38.1. 1-38.1. 4, 2017 | 41 | 2017 |
| Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions M Kodzuka, T Ohkubo, K Hono, S Ikeda, HD Gan, H Ohno Journal of Applied Physics 111 (4), 2012 | 36 | 2012 |
| Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer H Gan, R Malmhall, Z Wang, BK Yen, J Zhang, X Wang, Y Zhou, X Hao, ... Applied Physics Letters 105 (19), 2014 | 32 | 2014 |
Ciaran FowleyHelmholtz-Zentrum Dresden-RossendorfVerified email at hzdr.de