| A steep switching WSe2 impact ionization field-effect transistor H Choi, J Li, T Kang, C Kang, H Son, J Jeon, E Hwang, S Lee Nature Communications 13 (1), 6076, 2022 | 16 | 2022 |
| Broad‐Spectrum Photodetection with High Sensitivity Via Avalanche Multiplication in WSe2 H Choi, S Choi, T Kang, H Son, C Kang, E Hwang, S Lee Advanced Optical Materials 10 (22), 2201196, 2022 | 7 | 2022 |
| Electronic and electrocatalytic applications based on solution‐processed two‐dimensional platinum diselenide with thickness‐dependent electronic properties YS Cho, D Rhee, J Lee, SY Jung, J Eom, V Mazanek, B Wu, T Kang, ... EcoMat 5 (8), e12358, 2023 | 6 | 2023 |
| A steep-switching impact ionization-based threshold switching field-effect transistor C Kang, H Choi, H Son, T Kang, SM Lee, S Lee Nanoscale 15 (12), 5771-5777, 2023 | 6 | 2023 |
| Anisotropy of impact ionization in WSe2 field effect transistors T Kang, H Choi, J Li, C Kang, E Hwang, S Lee Nano Convergence 10 (1), 13, 2023 | 5 | 2023 |
| High‐κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low‐Power Steep‐Switching Computing Devices T Kang, J Park, H Jung, H Choi, SM Lee, N Lee, RG Lee, G Kim, SH Kim, ... Advanced Materials, 2312747, 2024 | 2 | 2024 |
| Super-steep switching device and inverter device using the same HJ Choi, TH Kang, CW Kang, HJ Son, JH Park, SJ Lee, SP Baek US Patent App. 18/598,689, 2024 | | 2024 |
| Super-steep switching device and inverter device using the same HJ Choi, TH Kang, CW Kang, HJ Son, JH Park, SJ Lee, SP Baek US Patent App. 18/014,078, 2024 | | 2024 |
| High-𝜿 Dielectric (HfO T Kang, J Park, H Jung, H Choi, SM Lee, N Lee, RG Lee, G Kim, SH Kim, ... | | 2024 |
| High-quality HfO2/HfSe2 gate stack for low-power steep-switching computing devices S Lee, T Kang, J Park, H Jung, H Choi, N Lee, J Jeon, YH Kim | | 2023 |
| Negative transconductance device and multi-valued memory device using the same S Lee, H Son, C Haeju, K Taeho, C Kang, B Sungpyo, HH Yoo, JH JU US Patent App. 17/976,234, 2023 | | 2023 |
