| 75 nm damascene metal gate and high-k integration for advanced CMOS devices B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ... Digest. International Electron Devices Meeting,, 355-358, 2002 | 146 | 2002 |
| Characterization and modeling of hysteresis phenomena in high K dielectrics C Leroux, J Mitard, G Ghibaudo, X Garros, G Reimbold, B Guillaumor, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 126 | 2004 |
| Frequency characterization and modeling of interface traps in gate dielectric stack from a capacitance point-of-view P Masson, JL Autran, M Houssa, X Garros, C Leroux Applied Physics Letters 81 (18), 3392-3394, 2002 | 94 | 2002 |
| Hybrid FDSOI/Bulk high-k/Metal gate platform for Low Power (LP) multimedia technology C Fenouillet-Beranger, P Perreau, L Pham-Nguyen, S Denorme, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 61 | 2009 |
| Work-function engineering in gate first technology for multi-VT dual-gate FDSOI CMOS on UTBOX O Weber, F Andrieu, J Mazurier, M Casse, X Garros, C Leroux, F Martin, ... 2010 International Electron Devices Meeting, 3.4. 1-3.4. 4, 2010 | 51 | 2010 |
| Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network P Salome, C Leroux, P Crevel, JP Chante Microelectronics Reliability 39 (11), 1579-1591, 1999 | 44 | 1999 |
| X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2/Si interface LQ Zhu, N Barrett, P Jegou, F Martin, C Leroux, E Martinez, H Grampeix, ... Journal of Applied Physics 105 (2), 2009 | 43 | 2009 |
| Large-Scale time characterization and analysis of PBTI in HFO2/Metal gate stacks J Mitard, X Garros, LP Nguyen, C Leroux, G Ghibaudo, F Martin, ... 2006 IEEE International Reliability Physics Symposium Proceedings, 174-178, 2006 | 43 | 2006 |
| DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics M Dentan, P Abbon, E Delagnes, N Fourches, D Lachartre, F Lugiez, ... IEEE Transactions on Nuclear Science 43 (3), 1763-1767, 1996 | 43 | 1996 |
| Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT I Nifa, C Leroux, A Torres, M Charles, G Reimbold, G Ghibaudo, E Bano Microelectronic Engineering 215, 110976, 2019 | 36 | 2019 |
| Measurement of dipoles/roll-off/work functions by coupling CV and IPE and study of their dependence on fabrication process M Charbonnier, C Leroux, V Cosnier, P Besson, E Martinez, N Benedetto, ... IEEE transactions on electron devices 57 (8), 1809-1819, 2010 | 35 | 2010 |
| Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer PH Morel, G Haberfehlner, D Lafond, G Audoit, V Jousseaume, C Leroux, ... Applied Physics Letters 101 (8), 2012 | 33 | 2012 |
| An efficient model for accurate capacitance-voltage characterization of high-k gate dielectrics using a mercury probe X Garros, C Leroux, JL Autran Electrochemical and solid-state letters 5 (3), F4, 2002 | 33 | 2002 |
| Guidelines to improve mobility performances and BTI reliability of advanced High-K/Metal gate stacks X Garros, M Cassé, G Reimbold, F Martin, C Leroux, A Fanton, O Renault, ... 2008 Symposium on VLSI Technology, 68-69, 2008 | 32 | 2008 |
| Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C–V F Piallat, V Beugin, R Gassilloud, L Dussault, B Pelissier, C Leroux, ... Applied surface science 303, 388-392, 2014 | 31 | 2014 |
| Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks G Reimbold, J Mitard, X Garros, C Leroux, G Ghibaudo, F Martin Microelectronics Reliability 47 (4-5), 489-496, 2007 | 31 | 2007 |
| Investigation on trapping and detrapping mechanisms in HfO2 films J Mitard, C Leroux, G Ghibaudo, G Reimbold, X Garros, B Guillaumot, ... Microelectronic engineering 80, 362-365, 2005 | 29 | 2005 |
| Light emission microscopy for thin oxide reliability analysis C Leroux, D Blachier, O Briere, G Reimbold Microelectronic engineering 36 (1-4), 297-300, 1997 | 29 | 1997 |
| Study of a 3D phenomenon during ESD stresses in deep submicron CMOS technologies using photon emission tool P Salome, C Leroux, JP Chante, P Crevel, G Reimbold 1997 IEEE International Reliability Physics Symposium Proceedings. 35th …, 1997 | 29 | 1997 |
| Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe: C/HfO/sub 2//TiN surface channel n-and p-MOSFETs O Weber, F Andrieu, M Cassé, T Ernst, J Mitard, F Ducroquet, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 28 | 2004 |
