Articles with public access mandates - Anindya NathLearn more
Not available anywhere: 1
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
Mandates: US Department of Energy, US Department of Defense
Available somewhere: 12
Ultra-broadband photodetectors based on epitaxial graphene quantum dots
A El Fatimy, A Nath, BD Kong, AK Boyd, RL Myers-Ward, KM Daniels, ...
Nanophotonics 7 (4), 735-740, 2018
Mandates: US National Science Foundation, US Department of Defense
Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene
KM Daniels, MM Jadidi, AB Sushkov, A Nath, AK Boyd, K Sridhara, ...
2D Materials 4 (2), 025034, 2017
Mandates: US National Science Foundation, US Department of Defense
Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates
TJ Anderson, AD Koehler, MJ Tadjer, JK Hite, A Nath, NA Mahadik, ...
Applied Physics Express 10 (12), 126501, 2017
Mandates: US Department of Defense
Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
VR Anderson, N Nepal, SD Johnson, ZR Robinson, A Nath, AC Kozen, ...
Journal of Vacuum Science & Technology A 35 (3), 2017
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Electrothermal evaluation of AlGaN/GaN membrane high electron mobility transistors by transient thermoreflectance
MJ Tadjer, PE Raad, PL Komarov, KD Hobart, TI Feygelson, AD Koehler, ...
IEEE Journal of the Electron Devices Society 6, 922-930, 2018
Mandates: US Department of Defense
High voltage GaN lateral photoconductive semiconductor switches
AD Koehler, TJ Anderson, A Khachatrian, A Nath, MJ Tadjer, SP Buchner, ...
ECS Journal of Solid State Science and Technology 6 (11), S3099, 2017
Mandates: US Department of Defense
Effect of surface passivation and substrate on proton irradiated AlGaN/GaN HEMT transport properties
JC Gallagher, TJ Anderson, AD Koehler, NA Mahadik, A Nath, BD Weaver, ...
ECS Journal of Solid State Science and Technology 6 (11), S3060, 2017
Mandates: US Department of Defense
Electrochemically prepared polycrystalline copper surface for the growth of hexagonal boron nitride
K Sridhara, BN Feigelson, JA Wollmershauser, JK Hite, A Nath, ...
Crystal Growth & Design 17 (4), 1669-1678, 2017
Mandates: US Department of Defense
Determining the nature of the gap in semiconducting graphene
JC Prestigiacomo, A Nath, MS Osofsky, SC Hernández, VD Wheeler, ...
Scientific Reports 7 (1), 41713, 2017
Mandates: US Department of Defense
Contactless millimeter wave method for quality assessment of large area graphene
D Bloos, J Kunc, L Kaeswurm, RL Myers-Ward, K Daniels, M DeJarld, ...
2D Materials 6 (3), 035028, 2019
Mandates: US Department of Defense, German Research Foundation
Quantum transport in functionalized epitaxial graphene without electrostatic gating
EH Lock, JC Prestigiacomo, P Dev, A Nath, RL Myers-Ward, TL Reinecke, ...
Carbon 175, 490-498, 2021
Mandates: US National Science Foundation, US Department of Defense
Electrical and Low Frequency Noise Characterization of Graphene Chemical Sensor Devices Having Different Geometries
JB Nah, FK Perkins, EH Lock, A Nath, A Boyd, RL Myers-Ward, DK Gaskill, ...
Sensors 22 (3), 1183, 2022
Mandates: US National Science Foundation, US Department of Defense
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