The carbon⟨ 100⟩ split interstitial in SiC TT Petrenko, TL Petrenko, VY Bratus Journal of Physics: Condensed Matter 14 (47), 12433, 2002 | 68 | 2002 |
Optical and electron paramagnetic resonance study of light-emitting ion implanted silicon dioxide layers MY Valakh, VA Yukhimchuk, VY Bratus’, AA Konchits, PLF Hemment, ... Journal of applied physics 85 (1), 168-173, 1999 | 64 | 1999 |
Structural transformations and silicon nanocrystallite formation in SiOx films VY Bratus’, VA Yukhimchuk, LI Berezhinsky, MY Valakh, IP Vorona, ... Semiconductors 35, 821-826, 2001 | 39 | 2001 |
Positively charged carbon vacancy in three inequivalent lattice sites of : Combined EPR and density functional theory study VY Bratus’, TT Petrenko, SM Okulov, TL Petrenko Physical Review B—Condensed Matter and Materials Physics 71 (12), 125202, 2005 | 36 | 2005 |
Functionalization of 2D macroporous silicon under the high-pressure oxidation L Karachevtseva, M Kartel, V Kladko, O Gudymenko, W Bo, V Bratus, ... Applied Surface Science 434, 142-147, 2018 | 28 | 2018 |
’, VA Yukhimchuk, LI Berezhinsky, M. Ya. Valakh, IP Vorona, IZ Indutnyi, TT Petrenko, PE Shepeliavyi, and IB Yanchuk VY Bratus Semiconductors 35, 854, 2001 | 28 | 2001 |
Positively charged carbon vacancy in 6H–SiC: EPR study VY Bratus, IN Makeeva, SM Okulov, TL Petrenko, TT Petrenko, ... Physica B: Condensed Matter 308, 621-624, 2001 | 26 | 2001 |
A new spin one defect in cubic SiC VY Bratus, RS Melnik, SM Okulov, VN Rodionov, BD Shanina, MI Smoliy Physica B: Condensed Matter 404 (23-24), 4739-4741, 2009 | 23 | 2009 |
Calculation of hyperfine parameters of positively charged carbon vacancy in SiC TT Petrenko, TL Petrenko, VY Bratus, JL Monge Physica B: Condensed Matter 308, 637-640, 2001 | 21 | 2001 |
EPR study of carbon vacancy-related defects in electron-irradiated 6H-SiC VY Bratus, IN Makeeva, SM Okulov, TL Petrenko, TT Petrenko, ... Materials Science Forum 353, 2001 | 20 | 2001 |
’, AA Bugai, VS Vikhnin, AA Klimov, V. M. Maksimenko, TL Petrenko, and VV Romanenko NP Baran, VY Bratus Phys. Solid State 35, 1544, 1993 | 19 | 1993 |
Spin-lattice relaxation of the Jahn-Teller nitrogen center in diamond IM Zaritskii, VY Bratus, VS Vikhnin, AA Konchits | 18 | 1976 |
Vacancy-related defects in ion-beam and electron irradiated 6H–SiC VY Bratus, TT Petrenko, HJ Von Bardeleben, EV Kalinina, A Hallén Applied surface science 184 (1-4), 229-236, 2001 | 14 | 2001 |
Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment VA Dan'ko, VY Bratus, IZ Indutnyi, IP Lisovskyy, SO Zlobin, ... Semiconductor physics, quantum electronics & optoelectronics, 413-417, 2010 | 13 | 2010 |
Electron paramagnetic resonance and electron‐nuclear double resonance of nonequivalent Yb3+ centers in stoichiometric lithium niobate G Malovichko, V Bratus1, V Grachev, E Kokanyan physica status solidi (b) 246 (1), 215-225, 2009 | 13 | 2009 |
Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis DI Bletskan, VY Bratus’, AR Luk’yanchuk, VT Maslyuk, OA Parlag Technical Physics Letters 34, 612-614, 2008 | 13 | 2008 |
Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers VY Bratus, MY Valakh, IP Vorona, TT Petrenko, VA Yukhimchuk, ... Journal of luminescence 80 (1-4), 269-273, 1998 | 13 | 1998 |
EPR and ENDOR study of the center in porous silicon VY Bratus, SS Ishchenko, SM Okulov, IP Vorona, HJ Von Bardeleben, ... Physical Review B 50 (20), 15449, 1994 | 13 | 1994 |
Structural, electrical and optical properties of bulk 4H and 6H p-type SiC EV Kalinina, AS Zubrilov, NI Kuznetsov, IP Nikitina, AS Tregubova, ... Materials Science Forum 338, 497-500, 2000 | 12 | 2000 |
EPR AND SPIN RELAXATION OF DEEP CENTERS IN SEMICONDUCTORS IN PRESENCE OF PHOTOELECTRONS (SI-FE0) MF Deigen, VY Bratus, BE Vugmeister, IM Zaritskii, AA Zolotukhin, ... ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI 69 (6), 2110-2117, 1975 | 12 | 1975 |