| Memristive switching mechanism for metal/oxide/metal nanodevices JJ Yang, MD Pickett, X Li, DAA Ohlberg, DR Stewart, RS Williams Nature nanotechnology 3 (7), 429-433, 2008 | 3386 | 2008 |
| The mechanism of electroforming of metal oxide memristive switches JJ Yang, F Miao, MD Pickett, DAA Ohlberg, DR Stewart, CN Lau, ... Nanotechnology 20 (21), 215201, 2009 | 1083 | 2009 |
| A scalable neuristor built with Mott memristors MD Pickett, G Medeiros-Ribeiro, RS Williams Nature materials 12 (2), 114-117, 2013 | 1049 | 2013 |
| Switching dynamics in titanium dioxide memristive devices MD Pickett, DB Strukov, JL Borghetti, JJ Yang, GS Snider, DR Stewart, ... Journal of Applied Physics 106 (7), 2009 | 893 | 2009 |
| High switching endurance in TaOx memristive devices JJ Yang, MX Zhang, JP Strachan, F Miao, MD Pickett, RD Kelley, ... Applied Physics Letters 97 (23), 232102-232102-3, 2010 | 760 | 2010 |
| Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices MD Pickett, RS Williams Nanotechnology 23 (21), 215202, 2012 | 393 | 2012 |
| Direct identification of the conducting channels in a functioning memristive device JP Strachan, MD Pickett, JJ Yang, S Aloni, ALD Kilcoyne, ... Adv. Mater 22 (32), 3573-3577, 2010 | 387 | 2010 |
| SPICE modeling of memristors H Abdalla, MD Pickett 2011 IEEE International Symposium of Circuits and Systems (ISCAS), 1832-1835, 2011 | 292 | 2011 |
| Engineering nonlinearity into memristors for passive crossbar applications J Joshua Yang, MX Zhang, MD Pickett, F Miao, J Paul Strachan, WD Li, ... Applied Physics Letters 100 (11), 2012 | 254 | 2012 |
| Chemical natures and distributions of metal impurities in multicrystalline silicon materials T Buonassisi, AA Istratov, MD Pickett, M Heuer, JP Kalejs, G Hahn, ... Progress in Photovoltaics: Research and Applications 14 (6), 513-531, 2006 | 238 | 2006 |
| State dynamics and modeling of tantalum oxide memristors JP Strachan, AC Torrezan, F Miao, MD Pickett, JJ Yang, W Yi, ... IEEE transactions on electron devices 60 (7), 2194-2202, 2013 | 236 | 2013 |
| Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2 S Kumar, MD Pickett, JP Strachan, G Gibson, Y Nishi, RS Williams arXiv preprint arXiv:1510.06694, 2015 | 223 | 2015 |
| Control of metal impurities in “dirty” multicrystalline silicon for solar cells AA Istratov, T Buonassisi, MD Pickett, M Heuer, ER Weber Materials Science and Engineering: B 134 (2-3), 282-286, 2006 | 187 | 2006 |
| Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration T Buonassisi, AA Istratov, MD Pickett, MA Marcus, TF Ciszek, ER Weber Applied Physics Letters 89 (4), 2006 | 179 | 2006 |
| Metal/TiO2 interfaces for memristive switches JJ Yang, JP Strachan, F Miao, MX Zhang, MD Pickett, W Yi, DAA Ohlberg, ... Applied physics A 102, 785-789, 2011 | 165 | 2011 |
| Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors F Miao, W Yi, I Goldfarb, JJ Yang, MX Zhang, MD Pickett, JP Strachan, ... ACS nano 6 (3), 2312-2318, 2012 | 158 | 2012 |
| Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal‐Oxide‐Metal System MD Pickett, J Borghetti, JJ Yang, G Medeiros‐Ribeiro, RS Williams Advanced Materials 15 (23), 1730-1733, 2011 | 131 | 2011 |
| Electrical transport and thermometry of electroformed titanium dioxide memristive switches J Borghetti, DB Strukov, MD Pickett, JJ Yang, DR Stewart, RS Williams Journal of Applied Physics 106 (12), 2009 | 131 | 2009 |
| Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution G Medeiros-Ribeiro, F Perner, R Carter, H Abdalla, MD Pickett, ... Nanotechnology 22 (9), 095702, 2011 | 121 | 2011 |
| Iron point defect reduction in multicrystalline silicon solar cells MD Pickett, T Buonassisi Applied Physics Letters 92 (12), 2008 | 116 | 2008 |
R. Stanley WilliamsTexas A & M University ECE DepartmentVerified email at rstanleywilliams.com